Abstract:During the growth of gallium nitride single crystals by sodium-flux method, temperature significantly impacts crystal quality. In this study, the mechanism of the effect of different temperature gradients on crystal growth is analyzed in depth using a combination of numerical simulation and experiment. The experimental results show that epitaxial growth of crystals occurs under positive temperature gradient conditions, while there is dissolution of seed crystals under negative temperature gradient conditions. The temperature, flow, and concentration data of the melted material during crystal growth were calculated using numerical simulation. The simulation findings reveal that the distribution of solution supersaturation varies according to temperature. High supersaturation at the bottom of the melt is favorable for crystal epitaxial growth on the surface of seed crystals under a positive temperature gradient. Meanwhile, low supersaturation at the top of the melt suppresses the hard polycrystalline layer here. Under negative temperature gradient conditions, low supersaturation at the bottom of the melt may lead to remelting of seed crystals, which is consistent with the experimental phenomenon. Furthermore, we propose an optimized heat source profile. This profile manages high supersaturation near seed crystals, aiding continuous growth. Finally, we have applied the curve in an applied way by proposing a multi-stage heating device, based on which the desired arbitrary temperature profile can be modulated. This research has broad applications in a variety of crystal growth experiments using fluid as the mother phase.

Numerical Investigation on the Effects of InSb Geometry on the InGaSb Crystal Growth under Microgravity

Numerical Investigation of the Effects of Axial Temperature Gradient and Cooling Rate on Ingasb Crystal Growth under Micro-Gravity

Investigation of directionally solidified InGaSb ternary alloys from Ga and Sb faces of GaSb(111) under prolonged microgravity at the International Space Station

Growth of InxGa1−xSb alloy semiconductor at the International Space Station (ISS) and comparison with terrestrial experiments

Growth of In x Ga1- x Sb alloy semiconductor at the International Space Station (ISS) and comparison with terrestrial experiments

Crystallization Kinetics of Hard Spheres in Microgravity in the Coexistence Regime: Interactions Between Growing Crystallites.

InxGa1-xSb/GaAs quantum well structures grown by molecular beam epitaxy

Numerical Simulation of Directional Solidification Process for the Polycrystalline Silicon Ingot

Numerical Simulation of Β-Ga2o3 Single Crystal Growth by Czochralski Method with an Insulation Lid

Growth Of Different Crystals Using A Modified Bridgman System

Effects of Solution Height and Crystal Rotation on the Solution Flow Behavior in the Top-Seeded Solution Growth of SiC Single Crystals

Effects of the Mushy Zone on the Temperature Field and the Flow Field During GaInSb Crystal Growth with the Traveling Heater Method

Ellipsometry Study of Optical Properties and Dielectric Response of SnS2 and GaS Crystals

Study of the Features of Concentration Inhomogeneities during the On-Ground-Based Processing of the Space Experiment on the Ge(Ga) Crystal Growth

Optimization of the Thermal Field of 8-Inch SiC Crystal Growth by PVT Method with “3 Separation Heater Method”

Synchrotron Radiation X-Ray Absorption Spectroscopy and Spectroscopic Ellipsometry Studies of InSb Thin Films on GaAs Grown by Metalorganic Chemical Vapor Deposition

Numerical simulation of temperature gradient effects on gallium nitride crystal growth by sodium-flux method

Study on Epitaxial Growth of High‐Quality InSb Materials

Temperature dynamic compensation vertical Bridgman method growth of high-quality GaSb single crystals

Molecular Beam Epitaxial Growth and Electronic Transport of GaInSb/GaSb (111) Quantum Wells

A meta-analysis of semiconductor materials fabricated in microgravity