Abstract:Recently, lattice-matched Zn 0.46 Cd 0.54 Se/ZnCdMgSe multiple-quantum-wells (MQWs) have been recognized as very promising materials to fabricate intersubband (ISB) devices such as quantum cascade lasers and mid-infrared photoconductors. These structures have important applications in biological and chemical detections. The ISB transition covers a wide mid-infrared wavelength range from 1.3 µm to a few tens of µm. In this work, two heavily doped n-Zn 0.46 Cd 0.54 Se/Zn 0.24 Cd 0.25 Mg 0.51 Se MQW structures have been grown on InP (001) substrate by molecular beam epitaxy. Temperature dependent steady-state photoluminescence (SSPL), temperature dependent time- resolved photoluminescence (TRPL), and Fourier transform infrared spectroscopy (FTIR) were performed to characterize their interband and ISB properties. These two MQW samples have similar structures except different well widths and different number of periods. The integrated SSPL intensities and the PL decay times of the MQWs were measured as functions of temperature in the range from 77 K to 290 K. The luminescence efficiency of the sample with 28 Å well width is larger than that of the sample with 42 Å well width although both samples exhibit similar temperature dependence of PL intensity. Time-resolved PL measurements show that the PL decay times of both samples decrease with increasing temperature. From 77 K to 290 K, the decay time of the sample with 28 Å well width is in the range of 440 ps ~ 120 ps and is much longer than that of the sample with 42 Å well width, which is in the range of 65 ps ~ 25 ps. Strong non-radiative recombinations dominate the luminescence behavior of the wider MQWs. Intersubband absorption spectra of the samples were measured by FTIR and show peak absorption at wavelengths of 3.99 µm and 5.35 µm for the MQWs with well widths of 28 Å and 42 Å, respectively, falling within the 3–5 µm range, which is of great interest for the infrared photodetector applications.

Excitonic Optical Bistability in ZnSe/ZnS Multiple Quantum Wells

Phase Identification and Strong Second Harmonic Generation in Pure Ε-Inse and Its Alloys.

Valley-selective exciton bistability in a suspended monolayer semiconductor

Identification of Twist-Angle-dependent Excitons in WS2/WSe2 Heterobilayers

Modulation of High-Intensity Optical Properties in CdS/CdSe/CdS Spherical Quantum Wells by CdSe Layer Thickness

Optical Characterization and Evaluation of the Conduction Band Offset for ZnCdSe∕ZnMgSe Quantum Wells Grown on InP(001) by Molecular-Beam Epitaxy

Binding Energy of Charged Excitons in ZnSe-based Quantum Wells

Intersubband transitions in molecular-beam-epitaxy-grown wide band gap II-VI semiconductors

Study of intersubband transitions of Zn[sub x]Cd[sub 1−x]Se∕Zn[sub x[sup ʹ]]Cd[sub y[sup ʹ]]Mg[sub 1−x[sup ʹ]−y[sup ʹ]]Se multiple quantum wells grown by molecular beam epitaxy for midinfrared device applications

Structural and Optical Properties of Non-Polar ZnO/Zn0.81Mg0.19O Multiple Quantum Wells Grown on R $r$ -Plane Sapphire Substrates by Plasma-Assisted Molecular Beam Epitaxy

Broadband optical non-linearity induced by charge-transfer excitons in type-II CdSe/ZnTe nanocrystals.

Observation of Double Indirect Interlayer Exciton in WSe2/WS2 Heterostructure.

ZnxCd1–xSe/Znx′Cdy′Mg1–x′–y′Se Multi‐quantum Well Structures for Intersubband Devices Grown by MBE

Recombination Dynamics of Excitons in Zno/Znmgo Multiple Quantum Wells Grown on Silicon Substrate

Excitonic interplay between surface polar III-nitride quantum wells and MoS$_2$ monolayer

Radiative and Nonradiative Recombination Processes in ZnCdSe∕ZnCdMgSe Multi-Quantum-wells

Non-Equilibrium First-Order Exciton Mott Transition at Monolayer Lateral Heterojunctions Visualized by Ultrafast Microscopy

The optical and spectroscopic properties of II–VI wide-gap ZnSe/ZnS and ZnSe/ZnTe strained-layer superlattices

Linear and nonlinear optical absorption of excitonic states in a wurtzite ZnO nanowire: Quantum size effect

Two-dimensional photonic crystal cavities in ZnSe quantum well structures

Optical Properties of Zn0.46Cd0.54Se/Zn0.24Cd0.25Mg0.51Se Multiple Quantum Wells for Infrared Photodetector Applications