Abstract:Stacking atomically thin films enables artificial construction of van der Waals heterostructures with exotic functionalities such as superconductivity, the quantum Hall effect, and engineered light-matter interactions. In particular, heterobilayers composed of monolayer transition metal dichalcogenides have attracted significant interest due to their controllable interlayer coupling and trapped valley excitons in moire superlattices. However, the identification of twist-angle-modulated optical transitions in heterobilayers is sometimes controversial since both momentum-direct (K-K) and -indirect excitons reside on the low energy side of the bright exciton in the monolayer constituents. Here, we attribute the optical transition at similar to 1.35 eV in the WS2/WSe2 heterobilayer to an indirect Gamma-K transition based on a systematic analysis and comparison of experimental photoluminescence spectra with theoretical calculations. The exciton wavefunction obtained by the state-of-the-art GW-Bethe-Salpeter equation approach indicates that both the electron and hole of the excitons are contributed by the WS2 layer. Polarization-resolved k-space imaging further confirms that the transition dipole moment of this optical transition is dominantly in-plane and is independent of the twist angle. The calculated absorption spectrum predicts that the so-called interlayer exciton peak coming from the K-K transition is located at 1.06 eV, but with a much weaker amplitude. Our work provides new insight into the steady-state and dynamic properties of twist-angle-dependent excitons in van der Waals heterostructures. The twist-angle-modulated excitons in vertically stacked WS2/WSe2 heterobilayers are proven to be an indirect G-K intralayer transition, with a nearly in-plane transition dipole moment.

Valley-selective exciton bistability in a suspended monolayer semiconductor

Identification of twist-angle-dependent excitons in WS<sub>2</sub>/WSe<sub>2</sub> heterobilayers

Valley coherent exciton-polaritons in a monolayer semiconductor

Electrical control of valley polarized charged biexcitons in monolayer WS$_2$

Nonlinear optical selection rule based on valley-exciton locking in monolayer ws2

Superior valley polarization and coherence of 2s excitons in monolayer WSe2

Electrical Control of Valley Polarized Charged Exciton Species in Monolayer WS 2

Optical Generation of Excitonic Valley Coherence in Monolayer WSe2

Valley-polarized Local Excitons in WSe2/WS2 Vertical Heterostructures.

Selective control of valley polarization in monolayer transition metal dichalcogenides among multiexcitonic states

Resonant optical Stark effect in monolayer WS2

Optical control of the valley Zeeman effect through many-exciton interactions

Efficient electrical switching of exciton states for valley contrast manipulation in two-dimensional perovskite/monolayer WS2 heterostructures

Switching of K-Q Intervalley Trions Fine Structure and Their Dynamics in N-Doped Monolayer WS2

Control of the valley polarization of monolayer WSe 2 by dexter-like coupling

Control of Exciton Valley Coherence in Transition Metal Dichalcogenide Monolayers

Long valley lifetime of dark excitons in single-layer WSe2

Tunable valley characteristics of WSe2 and WSe2/VSe2 heterostructure

Electrically Tunable Valley Dynamics in Twisted WSe_{2}/WSe_{2} Bilayers

Ultrafast valley-selective coherent optical manipulation with excitons in WSe$_2$ and MoS$_2$ monolayers

Nonvolatile Electrical Switching of Optical and Valleytronic Properties of Interlayer Excitons