Abstract:We report the growth of non-polar GaN and AlGaN films on Si(111) substrates by plasma-assisted metal-organic chemical vapor deposition (PA-MOCVD). Low-temperature growth of GaN or AlN was used as a buffer layer to overcome the lattice mismatch and thermal expansion coefficient between GaN and Si(111) and GaN’s poor wetting on Si(111). As grown, the buffer layer is amorphous, and it crystalizes during annealing to the growth temperature and then serves as a template for the growth of GaN or AlGaN. We used scanning electron microscopy (SEM), atomic force microscopy (AFM), and X-ray diffraction (XRD) characterization to investigate the influence of the buffer layer on crystal structure, orientation, and the morphology of GaN. We found that the GaN buffer layer is superior to the AlN buffer layer. The thickness of the GaN buffer layer played a critical role in the crystal quality and plane orientation and in reducing the cracks during the growth of GaN/Si(111) layers. The optimum GaN buffer layer thickness is around 50 nm, and by using the optimized GaN buffer layer, we investigated the growth of AlGaN with varying Al compositions. The morphology of the AlGaN films is flat and homogenous, with less than 1 nm surface roughness, and has preferred orientation in a-axis.

Characterization of GaN Buffer Layers and Its Epitaxial Layers Grown by MOCVD

Properties of low-temperature-deposited GaN buffer layers

Influence of Growth Pressure of A Gan Buffer Layer on the Properties of Mocvd Gan

Microstructural and Optical Properties of GaN Buffer Layers Grown on Graphene

Influence of Sputtered AlN Buffer on GaN Epilayer Grown by MOCVD

Influences Of Initial Buffer Layer Deposition On Electrical And Optical Properties In Cubic Gan Grown On Gaas(100) By Metalorganic Chemical Vapor Deposition

Surface Morphology of AlN Buffer Layer and Its Effect on GaN Growth by Metalorganic Chemical Vapor Deposition

X-ray diffraction analysis of MOCVD grown GaN buffer layers on GaAs(0 0 1) substrates

Non-polar A-Plane ZnO Films Grown on R-Al2o3 Substrates Using GaN Buffer Layers

Microstructure Evolution in Metal-organic Vapor Phase Epitaxy-Grown GaN with Different Low-Temperature Buffer Layer Annealing Time

Microstructures of GaN Buffer Layers Grown on Si(111) Using Rapic Thermal Process Low-Pressure Metalorganic Chemical Vapor Deposition

Growth processes of GaN buffer layer

Influences of reactor pressure of GaN buffer layers on morphological evolution of GaN grown by MOCVD

Characterization of high-quality MBE-grown GaN films on intermediate-temperature buffer layers

Mocvd Growth of Inn Using A Gan Buffer

Study of GaN thin films grown on intermediate-temperature buffer layers by molecular beam epitaxy

Characterization for Microstructure of GaN on Si Substrates

Plasma-Assisted MOCVD Growth of Non-Polar GaN and AlGaN on Si(111) Substrates Utilizing GaN-AlN Buffer Layer

Growth of High Quality GaN Thin Films by MBE on Intermediate-temperature Buffer Layers

Ultrathin GaN film and AlGaN/GaN heterostructure grown on thick AlN buffer by MOCVD

Growth of GaN on Buffer Layers with Different Polarities by Hydride Vapor-Phase Epitaxy