Temperature Effect on Ion-Irradiation-induced Grain Growth in Cu Thin Films

Joyce C. Liu,Jian Li,J. W. Mayer
DOI: https://doi.org/10.1063/1.345530
IF: 2.877
1990-01-01
Journal of Applied Physics
Abstract:The average grain size in Ar+-irradiated Cu films at room temperature increases with ion dose, following a relationship of d̄3.3−d̄3.30 =Kφ. For Ar+ and Xe++ irradiations, the grain growth kinetics are independent of temperature at T≤−60 °C and increase with temperature in the range from −60 to 102 °C. The activation energy of the temperature-dependent contribution to grain boundary migration is about 0.14 eV, and the growth rate is independent of ion flux, suggesting that the ion-irradiation-induced grain growth is associated with the thermal spike diffusion.
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