The electrical behavior of Cu thin film induced by carbon ion irradiation

P.P. Wang,Y.X. Liang,C. Xu,X.J. Wang,Y. Zhang,X.Q. Yan,Y.G. Wang,E.G. Fu
DOI: https://doi.org/10.1016/j.jnucmat.2019.01.027
IF: 3.555
2019-01-01
Journal of Nuclear Materials
Abstract:This study systematically investigates the influence of carbon ion irradiation on the electrical resistivity of single layer Cu films. Carbon ion irradiations with the energy of 3 MeV and the fluences of 5×1013 ions/cm2 and 5×1014 ions/cm2 were performed on the Cu films. The change of the resistivity and the temperature coefficient of resistivity before and after irradiation largely depends on the grain boundary. The amended model was proposed to describe the resistivity of ion-irradiated Cu films by considering the surface scattering, grain boundary scattering and the defects induced by ion irradiation.
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