Abstract:To better understand defect structure and the evolution of irradiation-induced damage in single crystal Ni, in situ Rutherford backscattering spectroscopy in channeling geometry (RBS/C) is performed along the <100>, <110>, and <211> axes with different probing beam energies. The RBS/C data reveal that damage evolution occurs in three steps. The first step at low doses (up to 0.2 dpa), characterized by a linear increase with dose, is related to the formation of point defects and small clusters. The second step in the intermediate dose range (0.2–1.0 dpa) shows a sublinear increase in disorder to saturation. This sublinear increase is due to the growth of defect clusters resulting from the interaction of irradiation-induced defects with already existing damage from previous ion impacts. The third step at high doses (1.0–32.4 dpa) exhibits a surprising decrease in the disorder level, which may be attributed to defect evolution from black spot defects to large dislocation loops that leads to strain relaxation. In addition, the damage extends much deeper than the predicted depths and is attributed to long-range defect migration effects confirmed by transmission electron microscopy (TEM) observations. Although similar damage evolution trends have been observed along all channeling directions, the disorder accumulation is largest along the <100> and <211> axes than observed along <110> axis. This “preferential” disordering process along <100> and <211> suggests that more defects are shielded by the <110> atomic rows than the two other axes. The co-existence of both uncorrelated displaced lattice atoms and dislocation loops in Ni irradiated at 1 ion/nm2 is revealed by the energy-dependent RBS/C studies along all three axes. In contrast, dislocation loops and stacking fault tetrahedral are simultaneously present in the crystal structure of Ni irradiated at 100 ions/nm2 that is consistent with previous molecular dynamics simulations and TEM observations.

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