Abstract:As the integration of chips in 3D integrated circuits (ICs) increases and the size of micro-bumps reduces, issues with the reliability of service due to electromigration and thermomigration are becoming more prevalent. In the practical application of solder joints, an increase in the grain size of intermetallic compounds (IMCs) has been observed during the reflow process. This phenomenon results in an increased thickness of the IMC layer, accompanied by a proportional increase in the volume of the IMC layer within the joint. The brittle nature of IMC renders it susceptible to excessive growth in small-sized joints, which has the potential to negatively impact the reliability of the welded joint. It is therefore of the utmost importance to regulate the formation and growth of IMCs. The following paper presents the electrodeposition of a Ni-W layer on a Cu substrate, forming a barrier layer. Subsequently, the barrier properties between the Sn/Cu reactive couples were subjected to a comprehensive and systematic investigation. The study indicates that the Ni-W layer has the capacity to impede the diffusion of Sn atoms into Cu. Furthermore, the Ni-W layer is a viable diffusion barrier at the Sn/Cu interface. The "bright layer" Ni2WSn4 can be observed in all Ni-W coatings during the soldering reflow process, and its growth was almost linear. The structure of the Ni-W layer is such that it reduces the barrier properties that would otherwise be inherent to it. This is due to the "bright layer" Ni2WSn4 that covers the original Ni-W barrier layer. At a temperature of 300 °C for a duration of 600 s, the Ni-W barrier layer loses its blocking function. Once the "bright layer" Ni2WSn4 has completely covered the original Ni-W barrier layer, the diffusion activation energy for Sn diffusion into the Cu substrate side will be significantly reduced, particularly in areas where the distortion energy is concentrated due to electroplating tension. Both the "bright layer" Ni2WSn4 and Sn will grow rapidly, with the formation of Cu-Sn intermetallic compounds (IMCs). At temperatures of 250 °C, the growth of Ni3Sn4-based IMCs is controlled by grain boundaries. Conversely, the growth of the Ni2WSn4 layer (consumption of Ni-W layer) is influenced by a combination of grain boundary diffusion and bulk diffusion. At temperatures of 275 °C and 300 °C, the growth of Ni3Sn4-based IMCs and the Ni2WSn4 layer (consumption of Ni-W layer) are both controlled by grain boundaries. The findings of this study can inform the theoretical design of solder joints with barrier layers as well as the selection of Ni-W diffusion barrier layers for use in different soldering processes. This can, in turn, enhance the reliability of microelectronic devices, offering significant theoretical and practical value.

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Molecular Dynamics and Experimental Investigation on the Interfacial Binding Mechanism in the Fe/Cu1−x-Nix Bimetallic Interface

Long-range Effect of Ion Irradiation on Cu Surface Segregation in a CuNi System

Long range effect of ion irradiation on diffusion coefficient of Ni in single crystal and polycrystalline copper

Ab Initio Based Modeling of Interfacial Segregation at Cu-rich Precipitates in Fe–Cu–Ni Alloys

An Investigation on Diffusion Bonding of Cu/Cu Using Various Grain Size of Ni Interlayers at Low Temperature

Effect of Ni on growth kinetics, microstructural evolution and crystal structure in the Cu(Ni)–Sn system

Effect of Sn Surface Diffusion on Growth Behaviors of Intermetallic Compounds in Cu/ni/snag Microbumps

Using Molecular Dynamic Simulation to Understand the Deformation Mechanism in Cu, Ni, and Equimolar Cu-Ni Polycrystalline Alloys

Shear-coupled Grain Boundary Migration in Bicrystal Ni with Metallic Dopant Segregation

Effect of Cu on the diffusion behavior of Bi in Sn matrix during electromigration

Interdiffusion and atomic mobility in FCC Ag–Cu–Ni alloys

On the Role of Ni in Cu Precipitation in Multicomponent Steels

Cu Segregation on the Interface Between Al2O3 Substrate and Al-1.4Cu Alloy

Atomistic Simulation Study of Grain Boundary Segregation and Grain Boundary Migration in Ni-Cr Alloys

Intermixing at Ni-N/Cu(001) Interface and Its Effects on the Magnetic Properties of Ni

Grain boundary diffusion in a compositionally complex alloy: Interplay of segregation, precipitation and interface structures in a Ni–Cr–Mo alloy

Atomic diffusion across Ni50Ti50—Cu explosive welding interface: Diffusion layer thickness and atomic concentration distribution

Diffusion Barrier Performance of Ni-W Layer at Sn/Cu Interfacial Reaction

Effect of recrystallization on diffusion in ultrafine grained Ni