Abstract:Bio‐realistic in structure and function is mimicked by the V‐oxygen‐vacancy AlOx memristor. The study not only mimics biological synapses in structure but also simulates the opening and closing states of the Ca2+ pathway in different degrees, and the performance of the devices is also improved. This study provides a simple and feasible method for fabricating brain‐like synaptic devices. Memristor possesses great potential and advantages in neuromorphic computing, while consistency and power consumption issues have been hindering its commercialization. Low cost and accuracy are the advantages of human brain, so memristors can be used to construct brain‐like synaptic devices to solve these problems. In this work, a five‐layer AlOx device with a V‐shaped oxygen distribution is used to simulate biological synapses. The device simulates synapse structurally. Further, under electrical stimulation, O2− moves to the Ti electrode and oxygen vacancy (Vo) moves to the Pt electrode, thus forming a conductive filament (CF), which simulates the Ca2+ flow and releases neurotransmitters to the postsynaptic membrane, thus realizing the transmission of information. By controlling applied voltage, the regulation of Ca2+ gated pathway is realized to control the Ca2+ internal flow and achieve different degrees of information transmission. Long‐term Potentiation (LTP)/Long‐term Depression (LTD), Spike Timing Dependent Plasticity (STDP), these basic synaptic performances can be simulated. The AlOx device realizes low power consumption (56.7 pJ/392 fJ), high switching speed (25 ns/60 ns), and by adjusting the window value, the nonlinearity is improved (0.133/0.084), a high recognition accuracy (98.18%) is obtained in neuromorphic simulation. It shows a great prospect in multi‐value storage and neuromorphic computing.

An Efficient Design of TaOx‐Based Memristor by Inserting an Ultrathin Al2O3 Layer with High Stability for Neuromorphic Computing and Logic Operation (adv. Phys. Res. 5/2023)

TaOx Based Memristors with Recessed Bottom Electrodes and Built-in Ion Concentration Gradient As Electronic Synapses

A TaOx/TiOy Bilayer Memristor with Enhanced Synaptic Features for Neuromorphic Computing

Engineering Incremental Resistive Switching in TaOx Based Memristors for Brain-Inspired Computing.

High-Performance Neuromorphic Computing and Logic Operation Based on a Self-Assembled Vertically Aligned Nanocomposite SrTiO 3 :MgO Film Memristor

Enhanced Short-Term Memory Plasticity of WOx-Based Memristors by Inserting AlOx Thin Layer

Non-filamentary Pd/Al<inf>2</inf>O<inf>3</inf>/TaO<inf>x</inf>/Ta Memristor as Artificial Synapse for Neuromorphic Computing

Complementary Digital and Analog Resistive Switching Based on AlO$_{\textit{x}}$ Monolayer Memristors for Mixed-Precision Neuromorphic Computing

Exploring conductance modulation and implementation of convolutional neural network in Pt/ZnO/Al2O3/TaN memristors for brain-inspired computing

AL2O3/ALOX Memristor with Nearly Ideal Synaptic Characteristics

Alleviating Conductance Nonlinearity Via Pulse Shape Designs in TaOx Memristive Synapses

Engineering resistive switching behavior in TAO<inf>x</inf> based memristive devices for non-von Neuman computing applications

Flexible TiO2-WO3−x Hybrid Memristor with Enhanced Linearity and Synaptic Plasticity for Precise Weight Tuning in Neuromorphic Computing

Synapse Neurotransmitter Channel‐Inspired AlOx Memristor with "V" Type Oxygen Vacancy Distribution

Self-rectifying TiOx-based memristor with synaptic plasticity

Bipolar to Unipolar Mode Transition and Imitation of Metaplasticity in Oxide Based Memristors with Enhanced Ionic Conductivity

Reliable Analog Resistive Switching Behaviors Achieved Using Memristive Devices in AlO X /hfo X Bilayer Structure for Neuromorphic Systems

Neuromorphic Memristor Based on Amorphous InAlZnO Film for Synaptic Behavior Simulation

Homo-layer hafnia-based memristor with large analog switching window

AL<inf>2</inf>O<inf>3</inf>/ALO<inf>X</inf> Memristor with Nearly Ideal Synaptic Characteristics

Ultrathin SrTiO3-based oxide memristor with both drift and diffusive dynamics as versatile synaptic emulators for neuromorphic computing