Abstract:Bio‐realistic in structure and function is mimicked by the V‐oxygen‐vacancy AlOx memristor. The study not only mimics biological synapses in structure but also simulates the opening and closing states of the Ca2+ pathway in different degrees, and the performance of the devices is also improved. This study provides a simple and feasible method for fabricating brain‐like synaptic devices. Memristor possesses great potential and advantages in neuromorphic computing, while consistency and power consumption issues have been hindering its commercialization. Low cost and accuracy are the advantages of human brain, so memristors can be used to construct brain‐like synaptic devices to solve these problems. In this work, a five‐layer AlOx device with a V‐shaped oxygen distribution is used to simulate biological synapses. The device simulates synapse structurally. Further, under electrical stimulation, O2− moves to the Ti electrode and oxygen vacancy (Vo) moves to the Pt electrode, thus forming a conductive filament (CF), which simulates the Ca2+ flow and releases neurotransmitters to the postsynaptic membrane, thus realizing the transmission of information. By controlling applied voltage, the regulation of Ca2+ gated pathway is realized to control the Ca2+ internal flow and achieve different degrees of information transmission. Long‐term Potentiation (LTP)/Long‐term Depression (LTD), Spike Timing Dependent Plasticity (STDP), these basic synaptic performances can be simulated. The AlOx device realizes low power consumption (56.7 pJ/392 fJ), high switching speed (25 ns/60 ns), and by adjusting the window value, the nonlinearity is improved (0.133/0.084), a high recognition accuracy (98.18%) is obtained in neuromorphic simulation. It shows a great prospect in multi‐value storage and neuromorphic computing.

AL<inf>2</inf>O<inf>3</inf>/ALO<inf>X</inf> Memristor with Nearly Ideal Synaptic Characteristics

AL2O3/ALOX Memristor with Nearly Ideal Synaptic Characteristics

Memristors with Tunable Characteristics Based on the Tellurene/nb-Doped MoS2 Heterojunction Toward Bio-Realistic Synaptic Emulation

Synapse Neurotransmitter Channel‐Inspired AlOx Memristor with "V" Type Oxygen Vacancy Distribution

A TaOx/TiOy Bilayer Memristor with Enhanced Synaptic Features for Neuromorphic Computing

Non-filamentary Pd/Al<inf>2</inf>O<inf>3</inf>/TaO<inf>x</inf>/Ta Memristor as Artificial Synapse for Neuromorphic Computing

A Ti/AlO X /tao X /pt Analog Synapse for Memristive Neural Network

Electronic Imitation of Behavioral and Psychological Synaptic Activities Using Tiox/Al2o3-Based Memristor Devices

Self-rectifying TiOx-based memristor with synaptic plasticity

Synaptic Functions and a Memristive Mechanism on Pt/AlO X /hfo X /tin Bilayer-Structure Memristors

Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfO X /zno X /tin Memristive System

Artificial Synapses Based on Atomic/Molecular Layer Deposited Bilayer-Structured Memristive Thin Films

Biocompatible AlOOH-based Memristor with Biomimicking Synaptic Functions for Artificial Nociceptor Applications

Memristor Based on TiOx/Al2O3 Bilayer As Flexible Artificial Synapse for Neuromorphic Electronics

Oxygen Vacancy-Dependent Synaptic Dynamic Behavior of TiO x -Based Transparent Memristor

Synaptic Memory Devices from CoO/Nb:SrTiO3 Junction.

TaOx Based Memristors with Recessed Bottom Electrodes and Built-in Ion Concentration Gradient As Electronic Synapses

HfOx/AlOy Superlattice‐Like Memristive Synapse

Digital and analog functionality in monolayer AlOx-based memristors with various oxidizer sources

Research on Electronic Synaptic Simulation of HfO2-based Memristor by Embedding Al2O3

An Efficient Design of TaOx‐Based Memristor by Inserting an Ultrathin Al2O3 Layer with High Stability for Neuromorphic Computing and Logic Operation (adv. Phys. Res. 5/2023)