Defects Passivation and Crystal Growth Promotion by Solution-Processed K Doping Strategy Toward 16.02% Efficiency Cu(In,Ga)(S,Se) <sub>2</sub> Solar Cells

Yunhai Zhao,Qianqian Gao,Shengjie Yuan,Qianqian Chang,Ting Liang,Zhenghua Su,Hongli Ma,Shuo Chen,Guangxin Liang,Ping Fan,Xianghua Zhang,Sixin Wu
DOI: https://doi.org/10.2139/ssrn.3969611
2021-01-01
SSRN Electronic Journal
Abstract:Solution processing of Cu(In,Ga)(S,Se)2 (CIGSSe) is highly promising for cost-effective photovoltaic devices. However, the efficiencies of solution-processed CIGSSe solar cell are severely restricted by the non-radiative recombination, which is resulting from the unsatisfactory crystal quality and deep-level defects. Therefore, it is highly desirable to suppress nonradiative recombination through promoting absorber grain growth and passivating the defects of CIGSSe films. Herein, an in-suit K doping strategy is implemented by introducing KF into the CIGSSe precursor solution to promote crystallization and passivate the deep defects.The effects of K on the solution-processed CIGSSe devices are systematic investigated. It has been discovered that K incorporation results in better crystallization, modified CIGSSe surface and fewer detrimental defects. Benefit from the reduction of the band-tailing effects, suppressed defects density and passivated interface recombination, the solution-processed CIGSSe solar cell achieve systematic improvement in open-circuit voltage and fill factor, enabling a champion efficiency of 16.02%, which is the highest value for alkali metal doped CIGSSe solar cells fabricated by solution-processed method. The effective in-suit K doping tactic opens an avenue for developing highly efficient solution-processed CIGSSe solar cells.
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