Abstract:We have produced solution-processed thin films of 6,13-bis(triisopropyl-silylethynyl) pentacene with grain sizes from a few micrometers up to millimeter scale by lateral crystallization from a rectangular stylus. Grains are oriented along the crystallization direction, and the grain size transverse to the crystallization direction depends inversely on the writing speed, hence forming a regular array of oriented grain boundaries with controllable spacing. We utilize these controllable arrays to systematically study the role of large-angle grain boundaries in carrier transport and charge trapping in thin film transistors. The effective mobility scales with the grain size, leading to an estimate of the potential drop at individual large-angle grain boundaries of more than one volt. This result indicates that the structure of grain boundaries is not molecularly abrupt, which may be a general feature of solution processed small molecule organic semiconductor thin films where relatively high energy grain boundaries are typically formed. This may be due to the crystal Transient measurements after switching from positive to negative gate bias or between large and small negative gate bias reveal reversible charge trapping with time constants on the order of 10 s, and trap densities that are correlated with grain boundary density. We suggest that charge diffusion along grain boundaries and other defects is the rate determining mechanism of the reversible trapping.

Charge Sharing Effects of Grain Boundary in Polysilicon TFTs

On the grain boundary barrier height and threshold voltage of undoped polycrystalline silicon thin-film transistors

Effects of non-uniform grains distribution of the intrinsic n-channel polycrystalline silicon TFTs

Effects of Longitudinal Grain Boundaries on the Performance of MILC-TFTs

Performance Of Asynchronous Double-Gate Poly-Si Thin-Film Transistors

A SPICE Model for Thin-Film Transistors Fabricated on Grain-Enhanced Polysilicon Film

Channel Length-Dependent Parasitic Bipolar Transistor Effect in Poly-Si TFTs Considering Traps at Grain Boundary

A Fully Analytical Current Model for Tunnel Field-Effect Transistors Considering the Effects of Source Depletion and Channel Charges

A Unified Charge Model Comprising Both 2D Quantum Mechanical Effects in Channels and in Poly-Silicon Gates of MOSFETs

Highly-Doped Region Optimization for Reduced Hot-Carrier Effects in Dual-Gate Low Temperature Polysilicon TFTs

Simulation of grain boundary effect on characteristics of ZnO thin film transistor by considering the location and orientation of grain boundary

Discrete Charging in Polysilicon Gates of Single Electron Transistors

Geometric Effect Elimination and Reliable Trap State Density Extraction in Charge Pumping of Polysilicon Thin-Film Transistors

EFFECT OF GRAIN BOUNDARY ON MINORITY CARRIER INJECTION INTO POLYSILICON EMITTER

An analytic surface potential based non-charge-sheet poly-Si TFT model including substrate and film thickness effects

Analysis of Threshold Voltage Decreasing for Double-Gate and Surrounding-Gate MOSFET's

Charge Trapping Model for Temporal Threshold Voltage Shift in A-Igzo TFTs Considering Variations of Carrier Density in Channel and Electric Field in Gate Insulator

Optimization of charge pumping technique in polysilicon TFTs for geometric effect elimination and trap state density extraction

Trapped-Charge-Effect-Based Above-Threshold Current Expressions for Amorphous Silicon TFTs Consistent With Pao–Sah Model

Fabrication and Characterization of Controllable Grain Boundary Arrays in Solution Processed Small Molecule Organic Semiconductor Films

A Unified Predictive TFT Model with Capability for Statistical Simulation