Abstract:Achieving higher performance in zinc oxide (ZnO) at room and mid-temperatures is crucial for applications requiring high energy conversion efficiency. This study focuses on grain boundary engineering techniques and an innovative modeling approach to optimize the thermoelectric properties of ZnO materials. An analysis was conducted to investigate the influence of grain boundaries on ZnO and evaluate its performance at mid-temperatures using the quality factor B as a descriptor.The findings indicate that the thermoelectric performance of ZnO could be significantly enhanced at low and mid-range temperatures if polycrystalline samples with engineered grain boundaries achieve low lattice thermal conductivity. An integrative model was developed to analytically examine the impact of barrier height , mean free path of carriers, and effective mass of carriers on charge mobility. Simulation results show that reducing from 0.5 eV to 0.1 eV resulted in a 45% increase in electron mobility, facilitating the overcoming of energy barriers that impede charge transport. Increasing the mean free path from 5 nm to 25 nm significantly increased charge carrier mobility, indicating fewer scattering events and higher velocities over longer distances.The study also shows that as the effective mass increases from 0.8 to 1.0, electron mobility peaks at 1.0 , suggesting an optimal balance where electron mobility is maximized. This implies an intricate interplay between carrier mass and lattice interaction forces within the material. Drawing on these insights, strategies aimed at improving the figure of merit were proposed, including microstructural engineering, advanced doping techniques, and passivation of grain boundaries. These findings provide a systematic approach to grain boundary engineering, potentially transforming ZnO into efficient materials for thermoelectric applications.

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