Abstract:As power efficiency becomes essential in automotive applications, DC-DC converters are widely employed [1]. However, size and thermal limits have made it challenging to continue using standard CMOS-based converters. Gallium Nitride (GaN) FETs, on the other hand, have a much higher conductivity with small size/capacitance in comparison to silicon FETs, enabling a highly efficient power conversion at high switching frequency (f SW ). However, there are several issues that must be resolved before using GaN in automotive. High f SW incurs larger di/dt and dv/dt transitions which injects high frequency electromagnetic interference (EMI) noise into the input bus. This creates unwanted noise or even a malfunction in a safety-critical system. A bulky input filter can reduce EMI, but it greatly increases size and cost. Several techniques [2-5] are reported to mitigate EMI. Frequency hopping using discrete frequencies is proposed in [2], but cannot spread the frequency evenly to lower the peak noise effectively. Alternatively, a series resistor is typically added at the gate of the GaN FET to slow down the transition [3-4]. However, the switching loss is dramatically increased. To mitigate this, adjustable driving strength is proposed in [5]. Unfortunately, the sensing and driver delays confine its use in low f SW applications, where the switch node rising time is several tens or hundreds of ns. Another issue of high f SW operation is that it causes significant current and voltage spikes due to the parasitics at the drain/source of the high side GaN FET (M H ), which could lead to GaN VDS breakdown or damage on logic-level FETs. Thus, EMI noise suppression and reliable operation of GaN FETs remain as major challenges in realizing high f SW power converters for automotive-use.

A Monolithic GaN Power Stage with Low Propagation Delay and High Reliability Level Shifting for High Frequency Power Converter.

A 2–10 MHz GaN HEMTs Half-Bridge Driver with Bandgap Reference Comparator Clamping and Dual Level Shifters for Automotive Applications

A GaN HEMTs Half-Bridge Driver with Bandgap Reference Comparator Clamping for High-Frequency DC-DC Converter.

A Tri-Slope Gate Driving GaN DC–DC Converter with Spurious Noise Compression and Ringing Suppression for Automotive Applications

A Monolithic GaN Power Stage with Common-Mode Transient Immunity and Negative Voltage Operation Design for High Frequency Power Converters

Design Of High Accuracy High Conversion Ratio Single-Stage Switching Power Converter For Modern Fpgas At 10mhz

25.2 A 10mhz 3-to-40v VIN Tri-Slope Gate Driving GaN DC-DC Converter with 40.5dbµv Spurious Noise Compression and 79.3% Ringing Suppression for Automotive Applications

A 200-V Half-Bridge Monolithic GaN Power IC with High-Speed Level Shifter and TEXPRESERVE0 Noise Immunity Enhancement Structure

A 200-V Half-Bridge Monolithic GaN Power IC with High-Speed Level Shifter and Dvs/dt Noise Immunity Enhancement Structure

A Level Shifter for High-Side GaN Drivers with Enhanced Dv/dt Immunity and Speed

A 200V High-Speed Level Shifter for Monolithic GaN IC with Enhanced $\mathrm{d}v_\mathrm{s}/\text{dt}$ Noise Immunity and Negative $v_\mathrm{s}$ Tolerance

A High-Speed Level Shifter with Dvs/dt Noise Immunity Enhancement Structure for 200V Monolithic GaN Power IC

A High-Voltage Half-Bridge Gate Drive Circuit for GaN Devices with High-Speed Low-Power and High-Noise-immunity Level Shifter

An Up to 10mhz 6.8% Minimum Duty Ratio GaN Driver with Dual-MOS-Switches Bootstrap and Adaptive Short-Pulse Based High-CMTI Level Shifter Achieving 6.05% Efficiency Improvement

A Monolithic GaN Driver and GaN Power Switch with Power-rail Charging Saturation Bootstrap technique achieving gate rising and falling time ratio of 1.28

A 50-V 50-Mhz High-Noise-Immunity Capacitive-Coupled Level Shifter with Digital Noise Blanker for GaN Drivers

A High-reliability Half-Bridge GaN FET Gate Driver with Advanced Floating Bias Control Techniques

Dual Active Bridge Based on High Voltage GaN Device

Virtual Prototype and GaN HEMT Based High Frequency LLC Converter Design

A Fully Integrated GaN Level Shifter with Negative Rail Compatibility and High dv/dt Immunity

A Highly Integrated PCB Embedded GaN Full-Bridge Module With Ultralow Parasitic Inductance