Abstract:This article presents detailed analysis and charact- erization results of a bare-die silicon carbide (SiC) MOSFET-based, half-bridge switch module with integrated decoupling capacitors and gate-driver circuitry, suitable for high-performance power electronics in applications such as next-generation automotive systems. The module structure enables wirebond-less integration in an entirely PCB-based assembly, featuring compact vertical power and gate loops with low parasitic elements. The assembly uses thermoelectrically multi-functional components, which simultaneously serves as busbars and heat sinks, thereby obviating the need for thermal interface material, and also allows quasi-double-sided cooling. This article starts with a comprehensive review of integrated power modules followed by a description of the module structure under consideration and its various practical design aspects. Thereafter, a detailed discussion is presented on electrical parasitic modeling, conducted using 3-D finite element analysis simulations in Ansys Q3D. Results indicate that the module can achieve extremely low values of loop inductances ($L_{\mathrm{ loop,power}}$ = 1.35 nH and $L_{\mathrm{ loop,gate}}$ = 5.1 nH at an oscillation frequency of 100 MHz) without entailing high parasitic capacitances, which can provide enhanced switching performance compared with state-of-the-art solutions. Experiments performed on a proof-of-concept half-bridge prototype, operated up to 600 V, 30 A demonstrate close adherence of the measured electrical parameters with theoretical predictions and acceptable preliminary thermal performance.

A Highly Integrated PCB Embedded GaN Full-Bridge Module With Ultralow Parasitic Inductance

A Gallium Nitride Integrated Power Module with Ultra-low Parasitic Inductances and Thermal Resistance

A 2–10 MHz GaN HEMTs Half-Bridge Driver with Bandgap Reference Comparator Clamping and Dual Level Shifters for Automotive Applications

A Compact Double-Sided Cooling 650V/30A GaN Power Module With Low Parasitic Parameters

A High Density 400 W DC/DC Power Module with Integrated Planar Transformer and Half Bridge GaN IC

A GaN HEMTs Half-Bridge Driver with Bandgap Reference Comparator Clamping for High-Frequency DC-DC Converter.

A GaN HEMT Integrated Power Module with Silver Sintering Processes

Design of Low Parasitic Inductance SiC MOSFETs Halfbridge Power Modules

Ultra-Low Inductance Design for A Gan Hemt Based 3L-Anpc Inverter

A High Frequency High Efficiency GaN Based Bi-Directional 48V/12V Converter with PCB Coupled Inductor for Mild Hybrid Vehicle

Low Parasitic-Inductance Packaging of a 650 V/150 A Half-Bridge Module Using Enhancement-Mode Gallium-Nitride High Electron Mobility Transistors

A 3-D Integrated Power Module of GaN HEMTs Based on Silver Sintering Processes

High-Frequency High-Efficiency LLC Module with Planar Matrix Transformer for CRPS Application Using GaN Power IC

Advanced GaN IPM for High-Frequency Converter Applications Enabled with Thin-Substrates

Design and Optimization of Gate Driver Integrated Multichip 3-D GaN Power Module

Characterization of a Bare-die SiC-based, Wirebond-less, Integrated Half-bridge with Multi-functional Bus-Bars

An 8A 998A/inch<SUP>3</SUP> 90.2% Peak Efficiency 48V-to-1V DC-DC Converter Adopting On-Chip Switch and GaN Hybrid Power Conversion

A GaN Power Integration Platform Based on Engineered Bulk Si Substrate with Eliminated Crosstalk Between High-Side and Low-Side HEMTs

Dual Active Bridge Based on High Voltage GaN Device

A Monolithic GaN Power Stage with Common-Mode Transient Immunity and Negative Voltage Operation Design for High Frequency Power Converters

Design and Transient Analysis of a 650V/150A GaN Power Modules with Integrated Bias Power and Gate-drive Circuit