A New High-Density Twin-Gate Isolation One-Time Programmable Memory Cell in Pure 28-nm CMOS Logic Process
Woan Yun Hsiao,Ping Chun Peng,Tzong-Sheng Chang,Yu-Der Chih,Wu-Chin Tsai,Meng-Fan Chang,Tun-Fei Chien,Ya-Chin King,Chrong-Jung Lin
DOI: https://doi.org/10.1109/ted.2014.2371617
IF: 3.1
2015-01-01
IEEE Transactions on Electron Devices
Abstract:A new and compact high-k dielectric breakdown one-time programmable (OTP) cell in pure 28-nm high-k metal gate (HKMG) process is proposed. By adopting a self-aligned twin-gate isolation (TGI) made by merged gate spacer, the new OTP cell can operate independently with a very small cell area. Fabricated by a pure 28-nm HKMG CMOS logic process, this OTP cell successfully achieves an ultrasmall cell size of 0.0441 μm2 on 28-nm HKMG CMOS logic platform. Using high-k dielectric breakdown as its program mechanism, the antifuse TGI OTP memory has more than three orders of ON/OFF read window with a low program voltage of 4 V in 20 μs. Furthermore, a highly density 64-kbit TGI OTP array has been fabricated and successfully demonstrates the new superior isolation and reliability performances.
engineering, electrical & electronic,physics, applied