Abstract:A wideband low-noise amplifier (LNA) with low and flat noise figure (NF) is presented in this article. For conventional wideband noise matching, the noise performance in the high-frequency region of the entire wideband is usually deteriorated due to the frequency-dependent nature of the minimum noise figure (NFmin) for a MOSFET. To address this issue, a novel wideband noise matching approach aiming at noise matching in high band is proposed. This approach can reduce the NF in high band at the cost of a slight NF increase in low band, eventually achieving a low and flat NF and thus a better overall noise performance for a wideband LNA. In addition, the multistage noise matching technique is employed at high frequencies to further reduce the NF caused by the second amplification stage. To validate the proposed techniques, a two-stage LNA prototype was designed and fabricated using a 65 nm CMOS process. The experimental results indicate a peak gain of 16.6 dB with a −3 dB bandwidth (BW) from 7.2 to 27.3 GHz (a fractional BW of 116%). Within the entire band of interest, the simulated NF is low and almost constant (3.3–3.4 dB), while the measured NF falls within the range of 3.30–3.72 dB. Considering the uncertainty of NF measurement, a 0.21 dB NF flatness is one of the best results among the reported millimeter-wave wideband LNAs. The measured third-order input intercept point (IIP3) is −6 dBm at 20 GHz, while the power consumption is 13.2 mW. In addition, only two passive transformers are used in this design, leading to a compact chip core area (0.14 mm2).

A W-Band Low Noise Amplifier with High Gain and Low Noise Figure in 65-Nm CMOS

A 54-67-ghz Low-Power Highly-Integrated Transceiver in 65-Nm CMOS for FMCW Radar Applications

A Compact 2.1–39 GHz Self-Biased Low-Noise Amplifier in 65 Nm CMOS Technology

Analysis and Design of Ultra-Wideband Low-Noise Amplifier with Input/Output Bandwidth Optimization and Single-Ended/Differential-Input Reconfigurability.

Ultralow Power E-Band Low-Noise Amplifier with Three-Stacked Current-Sharing Amplification Stages in 28-Nm CMOS

A compact, fully differential D-band CMOS amplifier in 65nm CMOS

A 11.2 Mw 48–62 GHz Low Noise Amplifier in 65 Nm CMOS Technology

A 6.512-GHz Balanced Variable-Gain Low-Noise Amplifier With Frequency-Selective Gain Equalization Technique

A K-Band High-Gain Lna In 0.13-Mu M Rf Cmos

A 134-154 GHz Low-Noise Amplifier Achieving 36.3-Db Maximum Gain with 3.8-Db Minimum Noise Figure for D-Band Imaging System.

A 54.4–90 GHz Low-Noise Amplifier in 65-nm CMOS

An Ultra-Compact 84.9-107Ghz LNA with 4.9db NF by Utilizing Coupled-line-based Gm-Boosting and Noise-Canceling Techniques in 65-Nm CMOS Technology

A 52-to-73GHz Tri-Coupled Transformer Based Noise Self-Canceling and Gm-Boosting LNA with 3.78dB NF and 22.4dB Gain in 40nm CMOS

A Ka-Band Low Noise Amplifier for Phased Array Radar System in 65nm CMOS

A 18–44 GHz Low Noise Amplifier with Input Matching and Bandwidth Extension Techniques

A Ku-Band Cmos Lna With Transformer Feedforward Gm-Boosting Technique

Gain-controlled CMOS Low Noise Amplifier

A 24 GHz Enhanced Neutralized Cascode LNA with 4.7 Db NF and 19.8 Db Gain

A 7.2–27.3 GHz CMOS LNA With 3.51 ±0.21 dB Noise Figure Using Multistage Noise Matching Technique

A Low Power High Gain UWB LNA in 0.18-Μm CMOS

Design of K-band Compact Wideband Low Noise Amplifier