Abstract:Ferroelectric thin films based on HfO2 have garnered increasing attention worldwide, primarily due to their remarkable compatibility with silicon and scalability, in contrast to traditional perovskite-structured ferroelectric materials. Nonetheless, significant challenges remain in their widespread commercial utilization, particularly concerning their notable wake-up effect and limited endurance. To address these challenges, we propose a novel strategy involving the inhomogeneous distribution of Hf/Zr elements within thin films and explore its effects on the ferroelectricity and endurance of Hf0.5Zr0.5O2 thin films. Through techniques such as grazing incidence X-ray diffraction, transmission electron microscopy, and piezoresponse force microscopy, we investigated the structural characteristics and domain switching behaviors of these materials. The experimental results indicate that the inhomogeneous distribution of Hf/Zr contributes to improving the frequency stability and endurance while maintaining a large remnant polarization in Hf0.5Zr0.5O2 ferroelectric thin films. By adjusting the distribution of Zr/Hf within the Hf0.5Zr0.5O2 thin films, significant enhancements in the remnant polarization (2P(r) > 35 mu C/cm(2)) and endurance (> 10(9)) along with a reduced coercive voltage can be achieved. Additionally, the fabricated ferroelectric thin films also exhibit high dielectric tunability (>= 26%) under a low operating voltage of 2.5 V, whether in the wake-up state or not. This study offers a promising approach to optimize both the ferroelectricity and endurance of HfO2-based thin films.

Improved Ferroelectric and Endurance Properties of Hf0.5Zr0.5O2 Thin Films by a Replacement Indium-Tin-oxide Top Electrode Process

Improved Ferroelectricity and Endurance of Hf0.5Zr0.5O2 Thin Films in Low Thermal Budget with Novel Bottom Electrode Doping Technology

Realization of Excellent Ferroelectricity in PDA-derived Hf0.5Zr0.5O2 Films Through Insertion of an Ultrathin Ti Metal Layer

Enhanced Endurance and Imprint Properties in Hf0.5Zr0.5O2- Ferroelectric Capacitors by Tailoring the Oxygen Vacancy

Enhanced Endurance and Imprint Properties in Hf 0.5 Zr 0.5 O 2−δ Ferroelectric Capacitors by Tailoring the Oxygen Vacancy

Excellent ferroelectric Hf0.5Zr0.5O2 thin films with ultra-thin Al2O3 serving as capping layer

Excellent Ferroelectric Properties of Hf0.5Zr0.5O2 Thin Films Induced by Al2O3 Dielectric Layer

Inductive Crystallization Effect of Atomic-Layer-deposited Hf0.5Zr0.5O2 Films for Ferroelectric Application

Ultrathin WOx Interfacial Layer Improving the Ferroelectricity and Endurance of Hf0.5Zr0.5O2 Thin Films on Polyimide

Significant Improvement of Ferroelectricity and Reliability in Hf0.5Zr0.5O2 Films by Inserting an Ultrathin Al2O3 Buffer Layer

Excellent Reliability in Hf0.5Zr0.5O2 Based Ferroelectric Device with Oxygen-Doped ITO Electrodes

Enhanced Polarization and Endurance Properties of ZrO2-based Ferroelectric Capacitor Using HfO2 Interfacial Layer

Optimization of Ferroelectricity and Endurance of Hafnium Zirconium Oxide Thin Films by Controlling Element Inhomogeneity

High polarization, endurance and retention in sub-5 nm Hf0.5Zr0.5O2 films

Enhanced polarization and endurance properties of ZrO2-based ferroelectric capacitor using HfO2interfacial layer

Stabilizing the Ferroelectric Phase of Hf 0.5 Zr 0.5 O 2 Thin Films by Charge Transfer

Enhanced Ferroelectric Polarization with Less Wake-Up Effect and Improved Endurance of Hf0.5Zr0.5O2 Thin Films by Implementing W Electrode

Improved ferroelectric properties of CMOS back-end-of-line compatible Hf0.5Zr0.5O2 thin films by introducing dielectric layers

Improving the Endurance for Ferroelectric Hf0.5Zr0.5O2 Thin Films by Interface and Defect Engineering

High polarization, endurance and retention in sub-5 nm Hf$_{0.5}$Zr$_{0.5}$O$_2$ films

Flexible Hf0.5Zr0.5O2 ferroelectric thin films on polyimide with improved ferroelectricity and high flexibility