Abstract:Vapor growth of semiconductors is analyzed using recently obtained dependence of the adsorption energy on the electron charge transfer between the surface adsorbed species and the bulk [Krukowski et al. J. Appl. Phys. 114 (2013) 063507, Kempisty et al. ArXiv <a class="link-https" data-arxiv-id="1307.5778" href="https://arxiv.org/abs/1307.5778">1307.5778</a> (2013)]. Ab initio calculations were performed to study the physical properties of GaN(0001) surface in ammonia-rich conditions, i.e. covered by mixture of NH3 molecules and NH2 radicals. The Fermi level is pinned at valence band maximum (VBM) and conduction band minimum (CBM) for full coverage by NH3 molecules and NH2 radicals, respectively. For the crossover content of ammonia of about 25% monolayer (ML), the Fermi level is unpinned. It was shown that hydrogen adsorption energy depends on the doping in the bulk for the unpinned Fermi level, i.e. for this coverage. Surface structure thermodynamic and mechanical stability criteria are defined and compared. Mechanical stability of the coverage of such surfaces was checked by determination of the desorption energy of hydrogen molecules. Thermodynamic stability analysis indicates that initally equilibrium hydrogen vapor partial pressure steeply increases with NH3 content to attain the crossover NH3/NH2 coverage, i.e. the unpinned Fermi level condition. For such condition the entire range of experimentally accessible pressures belongs showing that vapor growth of semiconductor crystals occurs predominantly for unpinned Fermi level at the surface, i.e. for flat bands. Accordingly, adsorption energy of most species depends on the doping in the bulk that is basis of the possible molecular scenario explaining dependence of the growth and the doping of semiconductor crystals on the doping in the bulk

DFT Calculations of NH3 Adsorption and Dissociation on Gallium-Rich GaAs(001)-4×2 Surface

Quantum Chemical Study of Adsorption and Dissociation of H2S on the Gallium-Rich GaAs (001)-4 × 2 Surface

Theoretical Investigation of the Ammonia Adsorption Process on Si(100)-2×1 Surface

Adsorption Of Ammonia On Si(100), (111) Surfaces - A Theoretical Approach

NH3 Dissociative Adsorption on Si(100)-(2×1) Surface: A B3LYP Quantum Chemical Cluster Model Study

Reconfiguration of GaAs (110) surface with the adsorption of Xe atoms

The Adsorption And Dissociation Of Ammonia On The Si-10 Cluster Surface

Theoretical Study of Adsorption and Dissociation of NH3 on the Ir{110}(1×2) Surface

A Density-Functional Study On The Atomic Geometry And Adsorption Of The Cu(100) C(2 X 2)/N Surface

DFT Total Energy Study on the Atomic Geometry and Adsorption of Cu(100) C(2 × 2)-N Surface

Adsorption and desorption of hydrogen at nonpolar GaN(1-100) surfaces: Kinetics and impact on surface vibrational and electronic properties

Density Functional Theory Study on Hydrogen Adsorption on Be(0001) Surface

The Adsorption and Dissociation of Ammonia on Small Si Clusters Surface

Dissociative Adsorption of Ph3 on the Si(111)-7 X 7 Surface: A Theoretical Investigation

General aspects of the vapor growth of semiconductor crystals - a study based on DFT simulations of the NH3/NH2 covered GaN(0001) surface in hydrogen ambient

Diffusion of Ga adatoms at the surface of GaAs(001) c(4x4) $α$ and $β$ reconstructions

First-principles investigation of Cs-NF3 co-adsorption on GaAs(100)-β2(2 × 4) surface

Gallium adsorption on (0001) GaN surfaces

Ag (1 0 0)/mgo (1 0 0) Interface: A Van Der Waals Density Functional Study

Weak Adsorption of Ethylene on Gaas(100)

Generation of Surface Ga-H Hydride and Reactivity toward CO 2