Abstract:To synthesize graphene by chemical vapor deposition (CVD) both in large area and with uniform layer number directly over Si/SiOx has proven challenging. The use of catalytically active metal substrates, in particular Cu, has shown far greater success and therefore is popular. That said, for electronics applications it requires a transfer procedure, which tends to damage and contaminate the graphene. Thus, the direct fabrication of uniform graphene on Si/SiOx remains attractive. Here we show a facile confinement CVD approach in which we simply “sandwich” two Si wafers with their oxide faces in contact to form uniform monolayer graphene. A thorough examination of the material reveals it comprises faceted grains despite initially nucleating as round islands. Upon clustering, they facet to minimize their energy. This behavior leads to faceting in polygons, as the system aims to ideally form hexagons, the lowest energy form, much like the hexagonal cells in a beehive, which requires the minimum wax. This process also leads to a near minimal total grain boundary length per unit area. This fact, along with the high graphene quality, is reflected in its electrical performance, which is highly comparable with graphene formed over other substrates, including Cu. In addition, the graphene growth is self-terminating. Our CVD approach is easily scalable and will make graphene formation directly on Si wafers competitive against that from metal substrates, which suffer from transfer. Moreover, this CVD route should be applicable for the direct synthesis of other 2D materials and their van der Waals heterostructures.

Synthesis, Characterization, and Properties of Large-Area Graphene Films

Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils

Synthesis Of Large-Area Single-Crystal Graphene

Graphene films with large domain size by a two-step chemical vapor deposition process

Synthetic Graphene Grown by Chemical Vapor Deposition on Copper Foils

Transfer of Large-Area Graphene Films for High-Performance Transparent Conductive Electrodes

Direct Growth of Large Area Uniform Double Layer Graphene Films on MgO(100) Substrates by Chemical Vapor Deposition

Rapid Growth Of Large-Area Single-Crystal Graphene Film By Seamless Stitching Using Resolidified Copper Foil On A Molybdenum Substrate

Growth of Large-Area Graphene Films from Metal-Carbon Melts

Synthesis of Homogenous Bilayer Graphene on Industrial Cu Foil

Novel Liquid Precursor-Based Facile Synthesis of Large-Area Continuous, Single, and Few-Layer Graphene Films

Chemical Vapor Deposition of Graphene on Thin-Metal Films

Criteria for the Growth of Large-Area Adlayer-Free Monolayer Graphene Films by Chemical Vapor Deposition

A Systematic Study of Atmospheric Pressure Chemical Vapor Deposition Growth of Large-Area Monolayer Graphene.

Ultrafast Transition of Nonuniform Graphene to High-Quality Uniform Monolayer Films on Liquid Cu

Large-Area Synthesis of High-Quality and Uniform Monolayer Graphene Without Unexpected Bilayer Regions

Graphene on silicon dioxide via carbon ion implantation in copper with PMMA-free transfer

CVD Growth of Large Area and Uniform Graphene on Tilted Copper Foil for High Performance Flexible Transparent Conductive Film

Transfer of Cvd-Grown Monolayer Graphene Onto Arbitrary Substrates

Self-Terminating Confinement Approach for Large-Area Uniform Monolayer Graphene Directly over Si/Siox by Chemical Vapor Deposition

Recent Progress in the Transfer of Graphene Films and Nanostructures