Abstract:Growing layer‐tunable and transfer‐free graphene films directly on device‐compatible substrates using ion implantation, fabricated photodetectors, field‐effect transistors, and heating devices. Direct synthesis of layer‐tunable and transfer‐free graphene on technologically important substrates is highly valued for various electronics and device applications. State of the art in the field is currently a two‐step process: a high‐quality graphene layer synthesis on metal substrate through chemical vapor deposition (CVD) followed by delicate layer transfer onto device‐relevant substrates. Here, we report a novel synthesis approach combining ion implantation for a precise graphene layer control and dual‐metal smart Janus substrate for a diffusion‐limiting graphene formation to directly synthesize large area, high quality, and layer‐tunable graphene films on arbitrary substrates without the post‐synthesis layer transfer process. Carbon (C) ion implantation was performed on Cu–Ni film deposited on a variety of device‐relevant substrates. A well‐controlled number of layers of graphene, primarily monolayer and bilayer, is precisely controlled by the equivalent fluence of the implanted C‐atoms (1 monolayer ~4 × 1015 C‐atoms/cm2). Upon thermal annealing to promote Cu‐Ni alloying, the pre‐implanted C‐atoms in the Ni layer are pushed toward the Ni/substrate interface by the top Cu layer due to the poor C‐solubility in Cu. As a result, the expelled C‐atoms precipitate into a graphene structure at the interface facilitated by the Cu‐like alloy catalysis. After removing the alloyed Cu‐like surface layer, the layer‐tunable graphene on the desired substrate is directly realized. The layer‐selectivity, high quality, and uniformity of the graphene films are not only confirmed with detailed characterizations using a suite of surface analysis techniques but more importantly are successfully demonstrated by the excellent properties and performance of several devices directly fabricated from these graphene films. Molecular dynamics (MD) simulations using the reactive force field (ReaxFF) were performed to elucidate the graphene formation mechanisms in this novel synthesis approach. With the wide use of ion implantation technology in the microelectronics industry, this novel graphene synthesis approach with precise layer‐tunability and transfer‐free processing has the promise to advance efficient graphene‐device manufacturing and expedite their versatile applications in many fields.

Graphene on silicon dioxide via carbon ion implantation in copper with PMMA-free transfer

Preparation of meter-scale Cu foils with decimeter grains and the use for the synthesis of graphene films

Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils

Surface Engineering of Copper Foils for Growing Centimeter-Sized Single-Crystalline Graphene.

Direct Synthesis of Layer‐Tunable and Transfer‐Free Graphene on Device‐Compatible Substrates Using Ion Implantation Toward Versatile Applications

Synthesis of Ultra-Thin Carbon Layers on Sic Substrate by Ion Implantation

Graphene: Synthesis of Layer‐Tunable Graphene: A Combined Kinetic Implantation and Thermal Ejection Approach (adv. Funct. Mater. 24/2015)

Metal‐Free Growth of Nanographene on Silicon Oxides for Transparent Conducting Applications

Wafer-Scale Graphene Growth on Si/SiO 2 Substrates via Metal-Free Chemical Vapor Deposition

Ion implantation assisted synthesis of graphene on various dielectric substrates

Wafer-scale single-crystal monolayer graphene grown on sapphire substrate

Self-Terminating Confinement Approach for Large-Area Uniform Monolayer Graphene Directly over Si/Siox by Chemical Vapor Deposition

Direct Wafer-Scale CVD Graphene Growth under Platinum Thin-Films

Growth of Large-Area Graphene Films from Metal-Carbon Melts

Ultrafast epitaxial growth of metre-sized single-crystal graphene on industrial Cu foil

A facile approach to direct growth of layer-tunable graphene on Ge substrate

Interfacial monolayer graphene growth on arbitrary substrate by nickel-assisted ion implantation

Crystallization of Copper Films on Sapphire Substrate for Large-Area Single-Crystal Graphene Growth

Uniform wafer-scale synthesis of graphene on evaporated Cu (111) film with quality comparable to exfoliated monolayer

Selective Mechanical Transfer of Graphene from Seed Copper Foil Using Rate Effects

Oxide-assisted Growth of Scalable Single-Crystalline Graphene with Seamlessly Stitched Millimeter-Sized Domains on Commercial Copper Foils.