Abstract:The segregation effect of phosphorus during the Czochralski growth of large-size n-type monocrystalline silicon contributes to the poor uniformity of radial resistivitys which directly affects the local electrical properties of the photovoltaic device. In the current work, a two-dimensional unsteady model was adopted to investigate the numerical simulation of the growth process of 300 mm industrial Czochralski silicon single crystal. Combined with the fluid flow, heat transfer and mass transfer models, investigation on the distribution of phosphorus impurities at the crystal/melt interface was performed, moreover the contribution of melt circulation flow to the two-phase segregation of phosphorus impurities was also thoroughly studied. The experimental results indicate that, with the increase of the crystal rotation, the circulation in the melt at the solid-liquid interface increases simultaneously, and the phosphorus impurities tend to be more uniform. With increasing crucible rotation, the circulation in the melt at the solid-liquid interface becomes smaller and the phosphorus impurities tend to be uneven. The simulation results show that the optimum crucible speed is 5 rpm. The inhomogeneity of phosphorus impurities in the melt at the solid-liquid interface increases first and then decreases with the increase of the casting speed. The combination of high crystal rotation and low crucible rotation is beneficial for the radial distribution uniformity of phosphorus impurities in the crystal. The accuracy of the model is verified by combining with the experiments, which provides a theoretical basis for large scale industrial production.

A Study of Electrical Uniformity for Monolithic Polycrystalline Silicon Solar Cells

Influence of gettering and passivation on uniformity of the electrical parameters in monolithic multicrystalline silicon solar cell

(Invited) Defects in Cast-Mono Crystalline Silicon

Aluminum Gettering in Photovoltaic Silicon

Study on the Effect of Melt Flow Behavior on the Uniformity of Phosphorus Doping During the Growth of Large-Size N-Type Monocrystalline Silicon by Czochralski Method

Comparison Of The Electrical Properties Of Perc Approach Applied To Monocrystalline And Multicrystalline Silicon Solar Cells

Impact of Surface Treatments on the Passivation Effect for N-Type Crystalline Silicon in Heterojunction Solar Cells

Gettering Efficacy of APCVD-Based Process Steps for Low-Cost PERT-Type Multicrystalline Silicon Solar Cells

Effect of melt flow rate and S/L interface on the P horizontal distribution in silicon

Improving the Quality of the Deteriorated Regions of Multicrystalline Silicon Ingots During General Solar Cell Processes

Optimized Phosphorus Diffusion Process and Performance Improvement of C-Si Solar Cell by Eliminating SiP Precipitates in the Emitter

Uniformity And Bandgap Engineering In Hydrogenated Nanocrystalline Silicon Thin Films By Phosphorus Doping For Solar Cell Application

Numerical Simulations of Multilevel Impurity Photovoltaic Effect in the Sulfur Doped Crystalline Silicon

Influence of Al2O3/SiNx Rear-Side Stacked Passivation on the Performance of Polycrystalline PERC Solar Cells

The Effect Of Non-Uniform Illumination On The Performance Of Conventional Polycrystalline Silicon Solar Cell

Improve Solar Cell Performance of High-Performance Multicrystalline Silicon Seeded with Low-Cost Compact Nucleation Layer

Effect of Subgrains on the Performance of Mono-Like Crystalline Silicon Solar Cells

Numerical study of mono-crystalline silicon solar cells with passivated emitter and rear contact configuration for the efficiency beyond 24% based on mass production technology

Performance Analysis on a Crystalline Silicon Photovoltaic Cell under Non-Uniform Illumination Distribution with a High Electrical Efficiency

Uniform growth of a-Si / μc-Si Tandem junction solar cells over 5.7m2 substrates

Study on P-a-Si:H properties of N-type heterogeneous junction solar cells manufactured by large-area parallel plate PECVD machine