Abstract:The exceptional performance of the silicon sensors in the radiation environment has led to their extensive application in high energy physics. Even so, the future experiments foresee these sensors to be exposed to higher radiation levels. Radiation induces a change in the macroscopic properties of the sensor, thus, severely affecting the sensor performance and ultimately becoming the limiting factor for its operation. With an aim to extend the radiation hardness capabilities of the silicon sensors for the future experiments there has been a growing interest in sensors with novel designs and unique characteristic of intrinsic charge multiplication. However, it is important to understand the effect of radiation damage on these sensors, before employing them in the main detector system. The RD50 collaboration extensively employs TCAD simulation tools for an in-depth understanding and structural optimization of the newly proposed sensor technologies, complementing the measurement results. The simulation package, by the finite element method, solves the Poisson equation coupled with the current continuity equations in the main device, typically with the drift-diffusion current model. There is also the possibility of co-simulating an electronic circuit connected to the main device using the incorporated SPICE package, for example to predict single event effects or read-out related waveforms. The simulation tools also provide an insight into the sensor operation both in the non-irradiated and the irradiated scenario in order to predict the voltage dependence of the leakage current, charge collection and electrical field distribution as function of irradiation. This has required the development of a radiation damage model within the simulation tools such that the measurements are well reproduced. The details of the radiation damage modelling using two commercial TCAD tools Silvaco and Synopsys, are discussed in this work.

TCAD Modeling of Nanoscale FinFET Structures on Bulk Silicon, Taking into Account the Effects of Radiation

TCAD Modeling of Nanoscale Bulk FinFET Structures with Account of Radiation Exposure

TCAD and SPICE Models for Account of Radiation Effects in Nanoscale MOSFET Structures

A Stabilized Numerical Scheme to Simulate Synergistic Effect of TID and TDR in Semiconductor Devices

Modeling of 0.18 μm NMOSFETs for TID effect

Numerical Modeling of Oxide and Interface Charge Buildup in Field Oxide Transistors During Irradiation and Annealing

TCAD Modeling of Surface Radiation Damage Effects: A State-Of-The-Art Review

Characterization of irradiated p-type silicon detectors for TCAD surface radiation damage model validation

Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-Nm Gate-Length Bulk and SOI FinFETs with SiO2/HfO2Gate Dielectrics

TCAD modeling of bulk radiation damage effects in silicon devices with the Perugia radiation damage model

Modeling Source / Drain Contact Resistance in Nanoscale MOSFETs

Modeling and Simulation-Based Layout Optimization for Tolerance to TID Effect on n-MOSFET

Radiation Damage Modelling: TCAD Simulation

FinFET and Nanowire SRAM Radiation Hardness Studies using Ab initio-TCAD Simulation Framework

TCAD simulations of silicon strip and pixel sensor optimization

Comparing different bulk radiation damage models in TCAD simulations of small-pitch 3D Si sensors

Modeling and Simulation of Ionizing Radiation Effect on Ferroelectric Field-Effect Transistor

A Model for Radiation-Induced Off-State Leakage Current in N-channel Metal-Oxide-semiconductor Transistors with Shallow Trench Isolation

A two-dimensional electrostatic potential model for total dose ionization effects in FOI FinFETs

3D Numerical Simulations of Single-Event Transient Effects in SOI FinFETs

TID Response of Bulk Si PMOS FinFETs: Bias, Fin Width, and Orientation Dependence