Abstract:Silicon carbide as a wide bandgap semiconductor is of great research interest for its widespread deployment in a range of electronic and optoelectronic devices, particularly in power electronics. However, defects in silicon carbide crystals are still major concerns that is hampering the development of high-performance devices. X-ray topography, particularly using the synchrotron beam has been instrumental in characterizing and analyzing defect configurations in silicon carbide crystals to optimize crystal growth as well as understand the effect of defects on device performance. In recent years, the use of ray-tracing simulation technique based on the orientation contrast mechanism to simulate contrast of defects observed on actual X-ray topographs has proven to be an effective approach to investigate the nature of crystallographic defects in various semiconductors. This review discusses the principle of ray-tracing simulation and its application and modifications to incorporate the effects of surface relaxation and photoelectric absorption to better simulate different dislocations observed in 4H–SiC as well as 6H–SiC crystals of various orientations. The adaptation to weak beam topography and plane wave topography is also discussed. The application of ray-tracing simulation in dislocation characterization of silicon carbide of different polytypes is systematically reviewed including different types of dislocations observed in both off-axis wafers and axial-sliced samples through synchrotron X-ray topography under various beam conditions, recording geometries and reflections. The result of ray-tracing simulation is further utilized in other studies including the investigation of effective penetration depth of all types of dislocations lying on the basal plane on grazing-incidence X-ray topography.

Rapid and Facile Characterization of Dislocations in Cross-Sectional GaAs/Si Films Using Electron Channeling Contrast Imaging

Fundamental and experimental aspects of diffraction for characterizing dislocations by electron channeling contrast imaging in scanning electron microscope

Observation and quantitative analysis of dislocations in steel using electron channeling contrast imaging method with precise control of electron beam incident direction

Large Area and Depth-Profiling Dislocation Imaging and Strain Analysis in Si/Sige/Si Heterostructures

Electron-beam-induced Current Study of Electrical Activity of Dislocations in 4h–sic Homoeptaxial Film

Multi-microscopy characterization of threading dislocations in CVD-grown diamond films

A Comparative Study of Methods for Calculating the Dislocation Density in GaN-on-Si Epitaxial Wafers

Analysis of Electron Channeling Contrast Imaging in Scanning Electron Microscopes

EBIC study of dislocations and stacking faults in 4 H-SiC homoepitaxial films

Carrier Recombination Activities and Structural Properties of Small-Angle Boundaries in Multicrystalline Silicon

Electron-beam-induced Current Study of Grain Boundaries in Multicrystalline Si

Measurements of dislocations in 4H-SiC with rocking curve imaging

Analysis of dislocation configurations in SiC crystals through X-ray topography aided by ray tracing simulations

Electron-Beam-Induced Current And Cathodoluminescence Study Of Dislocation Arrays In 4h-Sic Homoepitaxial Layers

Advanced semiconductor diagnosis by multidimensional electron-beam-induced current technique

Two-photon-excited, three-dimensional photoluminescence imaging and dislocation-line analysis of threading dislocations in 4H-SiC

Electrical Activities of Stacking Faults and Partial Dislocations in 4H-Sic Homoepitaxial Films

The Study of Misfit Dislocations in Inxga1-Xas/Gaas Strained Quantum-Well Structures

Electron-Beam-Induced Current and Cathodoluminescence Study of Dislocations in SrTiO3

Automatic Detection of Defect Positions Including Interface Dislocations and Strain Measurement in Ge/Si Heterostructure from Moiré Phase Processing of TEM Image

Direct observations of collinear dislocation interaction in a Fe-17.4 Mn-1.50 Al-0.29 C (wt.%) austenitic steel under cyclic loading by in-situ electron channelling contrast imaging and cross-correlation electron backscatter diffraction