Abstract:Synchrotron white beam x-ray topography images show that faint needle-like surface morphological features observed on the Si-face of 4H-SiC homoepitaxial layers using Nomarski optical microscopy are associated with V-shaped stacking faults in the epilayer. KOH etching of the V-shaped defects reveals small oval pits connected by a shallow trench which correspond to the surface intersections of two partial dislocations and the stacking fault connecting them. Transmission electron microscopy (TEM) specimens from regions containing the V-shaped defects prepared using focused ion beam milling show stacking sequences of (85), (50) and (63) at the faulted region using high resolution TEM. In order to study the formation mechanism of the V-shaped defects, low dislocation density 4H-SiC substrates were chosen for epitaxial growth, and the corresponding regions before and after epitaxy growth are compared in SWBXT images. It is found that no defects in the substrate are directly associated with the formation of the V-shaped defects. Simulation results of the contrast from the two partial dislocations associated with V-shaped defects in synchrotron monochromatic beam x-ray topography reveals the opposite sign nature of their Burgers vectors. Therefore, a mechanism of 2D nucleation during epitaxy growth is postulated for the formation of the V-shaped defects, which requires elimination of non-sequential c/4[0001] bilayers from the original structure to create the observed faulted stacking sequence.

EBIC study of dislocations and stacking faults in 4 H-SiC homoepitaxial films

Electrical Activities of Stacking Faults and Partial Dislocations in 4H-Sic Homoepitaxial Films

Electron-beam-induced Current Study of Electrical Activity of Dislocations in 4h–sic Homoeptaxial Film

Electron-Beam-Induced Current Study Of Stacking Faults And Partial Dislocations In 4h-Sic Schottky Diode

Electron-Beam-Induced Current And Cathodoluminescence Study Of Dislocation Arrays In 4h-Sic Homoepitaxial Layers

EBIC study on the electrical activity of stacking faults in silicon

Comparison of Dislocation Behavior in Si‐ and C‐face 4H‐sic

Effect of Fe impurity on the dislocations in 4H-SiC: Insights from electrical and optical characterization

Electrical and Optical Properties of Stacking Faults in 4H-SiC Devices

Direct Imaging and Optical Activities of Stacking Faults in 4H-Sic Homoepitaxial Films

Analysis of Dislocation Structures in 4H-Sic by Synchrotron X-ray Topography

Defect Appearance on 4H-Sic Homoepitaxial Layers Via Molten KOH Etching

Discrimination of Dislocations in 4H-Sic by Inclination Angles of Molten-Alkali Etched Pits

In Situ Monitoring of Stacking Fault Formation and Its Carrier Lifetime Mediation in P-Type 4H-Sic

Electronic and Optical Properties of Threading Dislocations in n-Type 4H-SiC

Characterization of V-shaped Defects in 4H-SiC Homoepitaxial Layers

Surface Defects and Accompanying Imperfections in 4h–sic: Optical, Structural and Electrical Characterization

Distribution of Basal Plane Dislocations in 4-Degree Off-Axis 4H-Sic Single Crystals

Ebic Study of Fe Precipitation on Bulk Stacking Fault in Czochralski-Grown Silicon

Anisotropic Deformation of 4H-Sic Wafers: Insights from Nanoindentation Tests

Two-photon-excited, three-dimensional photoluminescence imaging and dislocation-line analysis of threading dislocations in 4H-SiC