Erratum: “A model of TaOx threshold switching memristor for neuromorphic computing” [J. Appl. Phys. 132, 064904 (2022)]

Xing Li,Zhe Feng,Jianxun Zou,Xu Wang,Guyue Hu,Feifei Wang,Cheng Ding,Yunlai Zhu,Fei Yang,Zuheng Wu,Yuehua Dai

DOI: https://doi.org/10.1063/5.0123486

IF: 2.877

2022-01-01

Journal of Applied Physics

Abstract:First Page

What problem does this paper attempt to address?

A model of TaOx threshold switching memristor for neuromorphic computing

Xing Li,Zhe Feng,Jianxun Zou,Xu Wang,Guyue Hu,Feifei Wang,Cheng Ding,Yunlai Zhu,Fei Yang,Zuheng Wu,Yuehua Dai

DOI: https://doi.org/10.1063/5.0096643

IF: 3.5

2022-08-10

Physics Today

Abstract:In this article, we analyzed the experimental data based on the TaO x memristor and found that the threshold switching (TS) characteristics are related to temperature, and its logarithmic I–V curve is in good agreement with the space charge limiting current conduction mechanism. We use this mechanism to establish a TS physical model and then use the physical model to build an LTspice model. The model data are fitted with the experimental data, which is basically consistent. Next, using the TS memristor to simulate a leaky integrate-and-fire neuron circuit, the basic dynamics are realized. By changing the external temperature of the memristor, the output frequency of the neuron will be more intense as the temperature increases. Finally, an artificial spiking neural network (SNN) was built based on this neuron circuit for MNIST recognition task. In this SNN, the input signals fused both voltage amplitude and temperature to achieve neuromorphic multimodal preprocessing and enhance the recognition accuracy. These results demonstrated the reliability of the model, which enhanced the flexibility for exploring the application of TaO x -based TS memristors.

physics, multidisciplinary
Erratum: An improved memristor model connecting plastic synapse and nonlinear spiking neuron (2019 J. Phys. D: Appl. Phys. 52 275402)

S G Hu,G C Qiao,Y A Liu,L M Rong,Q Yu,Y Liu

DOI: https://doi.org/10.1088/1361-6463/ab1a10

2019-01-01

Abstract:In this work, a flux-controlled memristor model with the state variable covering negative and positive states and having decay behavior is developed to link the plastic synapse and nonlinear spiking neuron. For the voltage dependence of the conductance, the trace-based voltage can be directly applied to the memristor without additional threshold to implement various synaptic plasticity such as STDP, anti-STDP, et al. At the same time, the memristor model can be introduced as adaption element in nonlinear models to reduce the model complexity while remaining the richness of firing patterns. A 2D nonlinear voltage-stimulated spiking neuron model with a memristor connecting to the input is developed. Stereotypically arranging the input voltages, various firing patterns observed in cortical neurons, such the tonic, adapting, burst, latency, and bistability, are successfully carried out in the neuron model. The flux-controlled memristor model can describe the electrical behavior of paired memristors with a power supply, and well link plastic synapses and nonlinear spiking neurons, which may be helpful for simulating and constructing a complex memristor-based neuromorphic system.
Quantitative, Dynamic TaOx Memristor/Resistive Random Access Memory Model

Seung Hwan Lee,John Moon,YeonJoo Jeong,Jihang Lee,Xinyi Li,Huaqiang Wu,Wei D. Lu

DOI: https://doi.org/10.1021/acsaelm.9b00792

IF: 4.494

2020-01-01

ACS Applied Electronic Materials

Abstract:Oxide-based memristors are two-terminal devices whose resistance can be modulated by the history of applied stimulation. Memristors have been extensively studied as memory (as resistive random access memory) and synaptic devices for neuromorphic computing applications. Understanding the internal dynamics of memristors is essential for continued device optimization and large-scale implementation. However, a model that can quantitatively describe the dynamic resistive switching (RS, e.g., set/reset cycling) behavior in a self-consistent manner, starting from the initial forming process, is still missing. In this work, we present a Ta2O5/TaOx device model that can reliably predict all key RS properties during forming and repeated set and reset cycles. Our model revealed that the forming process originates from electric field focusing and localized heating effects from the initial nonuniform oxygen vacancy (V-O) defect distribution. A broad range of device behaviors, including cycling of the V-O distribution during set/reset cycles, multilevel storage, and two different filament growth processes, can be quantitatively captured by the model. In particular, a bulk-type doping effect with low programming current was found to produce linear conductance changes with a large dynamic range that can be highly desirable for neuromorphic computing applications. The simulation results were also compared with experimental dc and pulse measurements in 1R and 1T1R structures and showed excellent agreements.
An Efficient Design of TaOx‐Based Memristor by Inserting an Ultrathin Al2O3 Layer with High Stability for Neuromorphic Computing and Logic Operation (adv. Phys. Res. 5/2023)

Li Jiang,Yaoyao Jin,Yifan Zhao,Jiahao Meng,Jun Zhang,Xin Chen,Xinjiang Wu,Yongyue Xiao,Zipei Tao,Bei Jiang,Xin Wen,Cong Ye

DOI: https://doi.org/10.1002/apxr.202370009

2023-01-01

Abstract:Neuromorphic Computing In article number 2200086, Jun Zhang, Cong Ye, and co-workers introduce a bilayer structured memristor based on TaOx/Al2O3. This device, which shows stable and gradual switching behavior, shows potential for use in neuromorphic computing and in-memory logic operation. The latter application in particular could greatly improve the efficiency of novel computing systems. The latter application in particular could greatly improve the efficiency of novel computing systems. The cover image shows the implementation of the image logic “AND” function through a non-volatile logic operation scheme.
State Dynamics and Modeling of Tantalum Oxide Memristors

John Paul Strachan,Antonio C. Torrezan,Feng Miao,Matthew D. Pickett,J. Joshua Yang,Wei Yi,Gilberto Medeiros-Ribeiro,R. Stanley Williams

DOI: https://doi.org/10.1109/ted.2013.2264476

2013-01-01

Abstract:A key requirement for using memristors in circuits is a predictive model for device behavior that can be used in simulations and to guide designs. We analyze one of the most promising materials, tantalum oxide, for high density, low power, and high-speed memory. We perform an ensemble of measurements, including time dynamics across nine decades, to deduce the underlying state equations describing the switching in Pt/TaOx/Ta memristors. A predictive, compact model is found in good agreement with the measured data. The resulting model, compatible with SPICE, is then used to understand trends in terms of switching times and energy consumption, which in turn are important for choosing device operating points and handling interactions with other circuit elements.
Analytical modelling of the transport in analog filamentary conductive-metal-oxide/HfO x ReRAM devices

Donato Francesco Falcone,Stephan Menzel,Tommaso Stecconi,Matteo Galetta,Antonio La Porta,Bert Jan Offrein,Valeria Bragaglia

DOI: https://doi.org/10.1039/d4nh00072b

2024-03-24

Nanoscale Horizons

Abstract:The recent co-optimization of memristive technologies and programming algorithms enabled neural networks training with in-memory computing systems. In this context, novel analog filamentary conductive-metal-oxide (CMO)/HfO x redox-based resistive switching memory (ReRAM) represents a key technology. Despite device performance enhancements reported in literature, the underlying mechanism behind resistive switching is not fully understood. This work presents the first physics-based analytical model of the current transport and of the resistive switching in these devices. As a case study, analog TaO x /HfO x ReRAM devices are considered. The current transport is explained by a trap-to-trap tunneling process, and the resistive switching by a modulation of the defect density within the sub-band of the TaO x that behaves as electric field and temperature confinement layer. The local temperature and electric field distributions are derived from the solution of the electric and heat transport equations in a 3D finite element ReRAM model. The intermediate resistive states are described as a gradual modulation of the TaO x defect density, which results in a variation of its electrical conductivity. The drift-dynamics of ions during the resistive switching is analytically described, allowing the estimation of defect migration energies in the TaO x layer. Moreover, the role of the electro-thermal properties of the CMO layer is unveiled. The proposed analytical model accurately describes the experimental switching characteristic of analog TaO x /HfO x ReRAM devices, increasing the physical understanding and providing the equations necessary for circuit simulations incorporating this technology.

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology
TSSM: Three-State Switchable Memristor Model Based on Ag/TiOx Nanobelt/Ti Configuration

Xiaoyue Ji,Donglian Qi,Zhekang Dong,Chun Sing Lai,Guangdong Zhou,Xiaofang Hu

DOI: https://doi.org/10.1142/s0218127421300202

IF: 2.45

2021-01-01

International Journal of Bifurcation and Chaos

Abstract:Memristive technologies are attractive due to their nonvolatility, high density, low power, nanoscale geometry, nonlinearity, binary/multiple memory capacity, and negative differential resistance. For memristive devices, a model corresponding with practical behavioral characteristics is highly favorable for the realization of its neuromorphic system and applications. In this paper, we propose a novel memristor model based on the Ag/TiOx nanobelt/Ti configuration, which can reflect three different states (i.e. original stage, transition stage, and resistive switching state) of the physical memristor with a satisfactory fitting precision (greater than 99.88%). Meanwhile, this work gives (1) an insight onto the electrical characteristics of the memristor model under different humidity conditions; (2) the influence of the water molecular concentration on the memristor behavior, which is of importance for the memristor fabrication and subsequent applications. For verification purposes, the proposed three-state switchable memristor is applied into the memristor-based logic implementation. The experimental results demonstrate that the constructed circuit is able to realize basic Boolean logic operations with fast response speed and high efficiency.
Engineering Incremental Resistive Switching in TaOx Based Memristors for Brain-Inspired Computing.

Zongwei Wang,Minghui Yin,Teng Zhang,Yimao Cai,Yangyuan Wang,Yuchao Yang,Ru Huang

DOI: https://doi.org/10.1039/c6nr00476h

IF: 6.7

2016-01-01

Nanoscale

Abstract:Brain-inspired neuromorphic computing is expected to revolutionize the architecture of conventional digital computers and lead to a new generation of powerful computing paradigms, where memristors with analog resistive switching are considered to be potential solutions for synapses. Here we propose and demonstrate a novel approach to engineering the analog switching linearity in TaOx based memristors, that is, by homogenizing the filament growth/dissolution rate via the introduction of an ion diffusion limiting layer (DLL) at the TiN/TaOx interface. This has effectively mitigated the commonly observed two-regime conductance modulation behavior and led to more uniform filament growth (dissolution) dynamics with time, therefore significantly improving the conductance modulation linearity that is desirable in neuromorphic systems. In addition, the introduction of the DLL also served to reduce the power consumption of the memristor, and important synaptic learning rules in biological brains such as spike timing dependent plasticity were successfully implemented using these optimized devices. This study could provide general implications for continued optimizations of memristor performance for neuromorphic applications, by carefully tuning the dynamics involved in filament growth and dissolution.
Memristive Devices and Systems: Modeling, Properties and Applications

Chun Sing Lai,Zhekang Dong,Donglian Qi

DOI: https://doi.org/10.3390/electronics12030765

IF: 2.9

2023-01-01

Electronics

Abstract:The memristor is considered to be a promising candidate for next-generation computing systems due to its nonvolatility, high density, low power, nanoscale geometry, nonlinearity, binary/multiple memory capacity, and negative differential resistance [...]
TaOx Based Memristors with Recessed Bottom Electrodes and Built-in Ion Concentration Gradient As Electronic Synapses

Minghui Yin,Yuchao Yang,Zongwei Wang,Teng Zhang,Yichen Fang,Xue Yang,Yimao Cai,Ru Huang

DOI: https://doi.org/10.1109/icsict.2016.7998667

2016-01-01

Abstract:Inspired by the computing architecture of human brain, neuromorphic computing promises massively parallel, energy efficient and fault tolerant computation compared with conventional von Neumann approaches. In order to achieve this ambitious goal, one of the crucial tasks is to make devices that can emulate the functions of biological synapses at the physical level. Here we fabricated a novel Pt/TaOx/Ta memristor with recessed Ta bottom electrodes, where the TaOx film was formed by thermal oxidation of the bottom electrode and thus had a constantly ascending concentration of oxygen vacancies from the Pt/TaOx interface to the TaOx/Ta interface. Such cell geometry and ion distribution profile gave rise to highly incremental and uniform resistive switching that emulated the potentiation or depression process of synapses. Furthermore, important synaptic learning rules, such as spike timing dependent plasticity, could also be implemented by these devices, making them well suited for electronic synapses in neuromorphic systems.
Correction: High-performance one-dimensional halide perovskite crossbar memristors and synapses for neuromorphic computing

Sujaya Kumar Vishwanath,Benny Febriansyah,Si En Ng,Tisita Das,Jyotibdha Acharya,Rohit Abraham John,Divyam Sharma,Putu Andhita Dananjaya,Metikoti Jagadeeswararao,Naveen Tiwari,Mohit Ramesh Chandra Kulkarni,Wen Siang Lew,Sudip Chakraborty,Arindam Basu,Nripan Mathews

DOI: https://doi.org/10.1039/d4mh90073a

IF: 13.3

2024-09-01

Materials Horizons

Abstract:Correction for 'High-performance one-dimensional halide perovskite crossbar memristors and synapses for neuromorphic computing' by Sujaya Kumar Vishwanath et al. , Mater. Horiz. , 2024, 11 , 2643–2656, https://doi.org/10.1039/D3MH02055J.

materials science, multidisciplinary,chemistry
Characteristics and Transport Mechanisms of Triple Switching Regimes of TaOx Memristor

Xiaojuan Lian,Miao Wang,Mingyi Rao,Peng Yan,J. Joshua Yang,Feng Miao

DOI: https://doi.org/10.1063/1.4982593

IF: 4

2017-01-01

Applied Physics Letters

Abstract:While tantalum oxide (TaOx) memristors have shown superior multilevel switching performances and emerged as one of the leading candidates for analog memory and neuromorphic applications, its microscopic switching mechanisms at different resistance regimes remain obscure. In this work, electron transport mechanisms of TaOx memristors have been revealed by analyzing transport characteristics in three different resistance switching regimes. A quantum point contact model coupled with a first principles calculation has been validated to account for different conduction behaviors, which further sheds light on the evolution of the conducting filaments during switching processes. The high endurance observed in the low resistance switching regime is rationalized based on the observation of an enhanced instability and noise in the presence of a single conduction channel, i.e., quantum conductance G0=2e2/h.
A Physics-Oriented Memristor Model with the Coexistence of NDR Effect and RS Memory Behavior for Bio-Inspired Computing

X. Ji,Z. Dong,C. S. Lai,G. Zhou,D. Qi

DOI: https://doi.org/10.1016/j.mtadv.2022.100293

IF: 9.918

2022-01-01

Materials Today Advances

Abstract:Bio-inspired computing promises fundamentally different ways to advances in artificial intelligence with extreme energy efficiency. Memristive technologies due to the non-volatility, high density, low-power, and synaptic bionic properties can help in realizing bio-inspired architecture and its hardware implementation. This paper proposes a novel physics-oriented memristor model with coexistence of negative differential resistance (NDR) effect and resistive switching (RS) memory behavior for bio-inspired computing. Firstly, an Ag/TiOx/FTO memristor is fabricated using sol-gel and magnetron sputtering method, and its performance test demonstrates that the coexistence of NDR effect and RS memory behavior can be modulated by the moisture. Then, a physical-oriented memristor model is constructed, which provides the possibility to explore the dynamics of the coexistence of NDR effect and RS memory behavior in simulation. Furthermore, a memristor-based affective computing circuit emulating the process of human affective associative learning is designed. The experiment demonstrates that the coexistence of NDR effect and RS memory behavior can change the memory time without additional circuit and cost, which is expected to realize the automatic conversion from short-term memory to long-term memory in bio-inspired computing.
Corrections to “zinc Oxide Nanostructures and High Electron Mobility Nanocomposite Thin Film Transistors” [nov 08 3001-3011

Fang‐Ze Li,Gen-Wen Hsieh,S. H. Dalal,Mary Newton,J.E. Stott,Pritesh Hiralal,Arokia Nathan,P. A. Warburton,Hüsnü Emrah Ünalan,Paul Beecher,Andrew J. Flewitt,Ian Robinson,G.A.J. Amaratunga,W. I. Milne

DOI: https://doi.org/10.1109/ted.2008.2010442

2009-01-01

Abstract:In our paper [F.M. Li et al., 2008], two errors were noticed after the paper went to press. On page 3002, near the middle of the left column, it should say "In this method, zinc oxide and carbon powders are mixed together, usually in a ZnO:C ratio of 1: 1 or 1:4 by weight." In Fig. 8, on page 3005, the x-axis label should say "energy (eV)" instead of "wavelength (eV)." Also, this paper should have been designated as Invited, as it is now above.
A Deep Study of Resistance Switching Phenomena in TaOx ReRAM Cells: System‐Theoretic Dynamic Route Map Analysis and Experimental Verification

Alon Ascoli,Stephan Menzel,Vikas Rana,Tim Kempen,Ioannis Messaris,Ahmet Samil Demirkol,Michael Schulten,Anne Siemon,Ronald Tetzlaff

DOI: https://doi.org/10.1002/aelm.202200182

IF: 6.2

2022-08-17

Advanced Electronic Materials

Abstract:This paper employs theoretic methods to gain a deep insight into the resistance switching phenomena emerging in a representative redox‐based random access memory cell. The application of a powerful analysis tool to an accurate physics‐based device model enables to understand the complex mechanisms, which induce memory loss in the non‐volatile memristor under both SET and RESET stimuli, opening up new interesting application scenarios. The multidisciplinary field of memristors calls for the necessity for theoretically‐inclined researchers and experimenters to join forces, merging complementary expertise and technical know‐how, to develop and implement rigorous and systematic techniques to design variability‐aware memristor‐based circuits and systems. The availability of a predictive physics‐based model for a memristor is a necessary requirement before commencing these investigations. An interesting dynamic phenomenon, occurring ubiquitously in non‐volatile memristors, is fading memory. The latter may be defined as the appearance of a unique steady‐state behavior, irrespective of the choice of the initial condition from an admissible range of values, for each stimulus from a certain family, for example, the DC or the purely‐AC periodic input class. This paper first provides experimental evidence for the emergence of fading memory effects in the response of a TaOx redox‐based random access memory cell to inputs from both of these classes. Leveraging the predictive capability of a physics‐based device model, called JART VCM v1, a thorough system‐theoretic analysis, revolving around the Dynamic Route Map graphic tool, is presented. This analysis allows to gain a better understanding of the mechanisms, underlying the emergence of history erase effects, and to identify the main factors, that modulate this nonlinear phenomenon, toward future potential applications.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
The stochastic modeling of TiO2 memristor and its usage in neuromorphic system design

Miao Hu,Yu Wang,Qinru Qiu,Yiran Chen,Hai Li

DOI: https://doi.org/10.1109/ASPDAC.2014.6742993

2014-01-01

Abstract:Memristor, the fourth basic circuit element, has shown great potential in neuromorphic circuit design for its unique synapse-like feature. However, though the continuous resistance state of memristor has been expected, obtaining and maintaining an arbitrary intermediate state cannot be well controlled in nowadays memristive system. In addition, the stochastic switching behaviors have been widely observed. To facilitate the investigation on memristor-based hardware implementation, we built a stochastic behavior model of TiO2 memristive devices based on the real experimental results. By leveraging the stochastic behavior of memristors, a macro cell design composed of multiple parallel connecting memristors can be successfully used in implementing the weight storage unit and the stochastic neuron - the two fundamental components in neural network (NN)s, providing a feasible solution in memristor-based hardware implementation.
Erratum to “Evolver: a Deep Learning Processor With On-Device Quantization-Voltage-Frequency Tuning” [Feb 21 658-673]

Fengbin Tu,Weiwei Wu,Yang Wang,Hongjiang Chen,Feng Xiong,Man Shi,Ning Li,Jinyi Deng,Tianbao Chen,Leibo Liu,Shaojun Wei,Yuan Xie,Shouyi Yin

DOI: https://doi.org/10.1109/jssc.2021.3058024

2021-09-01

Abstract:In the above article [1], there are some references that were cited incorrectly in the text. The corrections are as follows:

engineering, electrical & electronic
Enhanced Computational Study with Experimental Correlation on I–V Characteristics of Tantalum Oxide (TaOx) Memristor Devices in a 1T1R Configuration

Sangwook Sihn,William L. Chambers,Minhaz Abedin,Karsten Beckmann,Nathaniel Cady,Sabyasachi Ganguli,Ajit K. Roy

DOI: https://doi.org/10.1002/smll.202310542

IF: 13.3

2024-03-23

Small

Abstract:Top Row: (d) TEM micrograph of the TaOx‐based ReRAM element with the TiN electrodes, TaOx switching and Ta oxygen exchange layer. (e) EDX 2D scan of ReRAM stack and V0 layer. Bottom Plots: Measured and the predicted I–V curves of the TaOx memristor device for various NMOS gate voltages (Vg) and electrical conductivity of conducting filament. Memristors, non‐volatile switching memory platform, has recently attracted significant interest, offering unique potential to enable the realization of human brain‐like neuromorphic computing efficiency. Memristors also demonstrate excellent temperature tolerance, long‐term durability, and high tunability with nanosecond pulses, making them highly attractive for neuromorphic computing applications. To better understand the material processing, microstructure, and property relationship of switching mechanisms in memristor devices, computational methodologies, and tools are developed to predict the I–V characteristics of memristor devices based on tantalum oxide (TaOx) resistive random‐access memory (ReRAM) integrated with an n‐channel metal–oxide–semiconductor (NMOS) transistor. A multiphysics model based on coupled partial differential equations for electrical and thermal transport phenomena is solved for the high‐ and low‐resistance states during the formation, growth, and destruction of a conducting filament through SET and RESET stages. These stages effectively represent the migration of oxygen vacancies within an oxide exchange layer. A series of parametric studies and energy minimization calculations are conducted to determine probable ranges for key material and model parameters accounting for the experimental data. The computational model successfully predicted the measured I–V curves across various gate voltages applied to the NMOS transistor in the one transistor one resistance (1T1R) configuration.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
TCAD Modeling of Resistive-Switching of HfO2 Memristors: Efficient Device-Circuit Co-Design for Neuromorphic Systems

Andre Zeumault,Shamiul Alam,Zack Wood,Ryan J. Weiss,Ahmedullah Aziz,Garrett S. Rose

DOI: https://doi.org/10.3389/fnano.2021.734121

2021-10-06

Frontiers in Nanotechnology

Abstract:In neuromorphic computing, memristors (or “memory resistors”) have been primarily studied as key elements in artificial synapse implementations, where the memristor provides a variable weight with intrinsic long-term memory capabilities, based on its modifiable resistive-switching characteristics. Here, we demonstrate an efficient methodology for simulating resistive-switching of HfO 2 memristors within Synopsys TCAD Sentaurus—a well established, versatile framework for electronic device simulation, visualization and modeling. Kinetic Monte Carlo is used to model the temporal dynamics of filament formation and rupture wherein additional band-to-trap electronic transitions are included to account for polaronic effects due to strong electron-lattice coupling in HfO 2 . The conductive filament is modeled as oxygen vacancies which behave as electron traps as opposed to ionized donors, consistent with recent experimental data showing p-type conductivity in HfO x films having high oxygen vacancy concentrations and ab-initio calculations showing the increased thermodynamic stability of neutral and charged oxygen vacancies under conditions of electron injection. Pulsed IV characteristics are obtained by inputting the dynamic state of the system—which consists of oxygen ions, unoccupied oxygen vacancies, and occupied oxygen vacancies at various positions—into Synopsis TCAD Sentaurus for quasi-static simulations. This allows direct visualization of filament electrostatics as well as the implementation of a nonlocal, trap-assisted-tunneling model to estimate current-voltage characteristics during switching. The model utilizes effective masses and work functions of the top and bottom electrodes as additional parameters influencing filament dynamics. Together, this approach can be used to provide valuable device- and circuit-level insight, such as forming voltage, resistance levels and success rates of programming operations, as we demonstrate.
Preliminary investigation on the implementation of an artificial synapse using TaOx-based memristor with thermally oxidized active layer

Juri Kim,Yongjin Park,Jung-Kyu Lee,Sungjun Kim

DOI: https://doi.org/10.1063/5.0182699

2023-12-07

Abstract:This study presents a preliminary exploration of thermally oxidized TaOx-based memristors and their potential as artificial synapses. Unlike the 10-min annealed devices, which display instability due to current overshoots, the 5-min annealed device exhibits stable resistive switching, retention, and endurance characteristics. Moreover, our memristor showcases synaptic behaviors encompassing potentiation, depression, spike-timing-dependent plasticity, and excitatory postsynaptic currents. This synaptic emulation holds tremendous promise for applications in neuromorphic computing, offering the opportunity to replicate the adaptive learning principles observed in biological synapses. In addition, we evaluate the device's suitability for pattern recognition within a neural network using the modified National Institute of Standards and Technology dataset. Our assessment reveals that the Pt/TaOx/Ta memristor with an oxidized insulator achieves outstanding potential manifested by an accuracy of 93.25% for the identical pulse scheme and an impressive accuracy of 95.42% for the incremental pulse scheme.

Erratum: “A model of TaOx threshold switching memristor for neuromorphic computing” [J. Appl. Phys. 132, 064904 (2022)]

A model of TaOx threshold switching memristor for neuromorphic computing

Erratum: An improved memristor model connecting plastic synapse and nonlinear spiking neuron (2019 J. Phys. D: Appl. Phys. 52 275402)

Quantitative, Dynamic TaOx Memristor/Resistive Random Access Memory Model

An Efficient Design of TaOx‐Based Memristor by Inserting an Ultrathin Al2O3 Layer with High Stability for Neuromorphic Computing and Logic Operation (adv. Phys. Res. 5/2023)

State Dynamics and Modeling of Tantalum Oxide Memristors

Analytical modelling of the transport in analog filamentary conductive-metal-oxide/HfO x ReRAM devices

TSSM: Three-State Switchable Memristor Model Based on Ag/TiOx Nanobelt/Ti Configuration

Engineering Incremental Resistive Switching in TaOx Based Memristors for Brain-Inspired Computing.

Memristive Devices and Systems: Modeling, Properties and Applications

TaOx Based Memristors with Recessed Bottom Electrodes and Built-in Ion Concentration Gradient As Electronic Synapses

Correction: High-performance one-dimensional halide perovskite crossbar memristors and synapses for neuromorphic computing

Characteristics and Transport Mechanisms of Triple Switching Regimes of TaOx Memristor

A Physics-Oriented Memristor Model with the Coexistence of NDR Effect and RS Memory Behavior for Bio-Inspired Computing

Corrections to “zinc Oxide Nanostructures and High Electron Mobility Nanocomposite Thin Film Transistors” [nov 08 3001-3011

A Deep Study of Resistance Switching Phenomena in TaOx ReRAM Cells: System‐Theoretic Dynamic Route Map Analysis and Experimental Verification

The stochastic modeling of TiO2 memristor and its usage in neuromorphic system design

Erratum to “Evolver: a Deep Learning Processor With On-Device Quantization-Voltage-Frequency Tuning” [Feb 21 658-673]

Enhanced Computational Study with Experimental Correlation on I–V Characteristics of Tantalum Oxide (TaOx) Memristor Devices in a 1T1R Configuration

TCAD Modeling of Resistive-Switching of HfO2 Memristors: Efficient Device-Circuit Co-Design for Neuromorphic Systems

Preliminary investigation on the implementation of an artificial synapse using TaOx-based memristor with thermally oxidized active layer