Abstract:Gallium nitride (GaN) high electron mobility transistors (HEMTs) are promising power devices due to their excellent characteristics. However, GaN HEMTs have vulnerable gates that are susceptible to noise and voltage spikes, limiting their implementation in power converters. This paper presents a GaN HEMTs half-bridge driver with bandgap reference comparator clamping (BGRCC) and dual level shifters (DLS) for high switching frequency automotive applications. The BGRCC scheme can adaptively clamp the bootstrap rail voltage at an appropriate level with acceptable voltage ripples, which guarantees the safety of high-side GaN HEMT. Meanwhile, DLS scheme is applied in both the high- and low-side driving path to effectively drive the GaN HEMTs with low propagation delay and high dv/dt immunity. The proposed driver is fabricated in 0.18 μm high voltage bipolar-complementary metaloxide semiconductor (CMOS)-double-diffused metaloxide semiconductor (DMOS) process and can support 2–10 MHz operating. The functionality and performance are verified by experimental results. A buck converter utilizing this driver with GaN HEMTs can achieve maximum efficiency of 91.58% with quite electromagnetic interference behavior in the 16.5-W output power rating when operating at 2 MHz, which is superior to conventional silicon-based power converters and suitable for automotive applications.

All-GaN Two-stage Turn-off Circuits for Over-current Protection in GaN Monolithic Power ICs

A 2–10 MHz GaN HEMTs Half-Bridge Driver with Bandgap Reference Comparator Clamping and Dual Level Shifters for Automotive Applications

Design and Experimental Demonstration of Integrated Over-Current Protection Circuit for GaN DC–DC Converters

Integrated High-Speed Over-Current Protection Circuit for GaN Power Transistors

Monolithic Integration of Gate Driver and Protection Modules with P-GaN Gate Power HEMTs

A Normalized Quantitative Method for GaN HEMT Turn-ON Overvoltage Modeling and Suppressing

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Enhancing Turn-off Performance in IGCT-Based High Power Applications—Part I: Anomalous High Current Turn-Off Mode and Safe Operating Area Expansion at Ultra-Low Voltage

Design of DC-DC buck converter with integrated over-current protection based on power AlGaN/GaN MIS-HEMT configuration

20.3 A GaN Gate Driver with On-chip Adaptive On-time Controller and Negative Current Slope Detector

Analysis and Suppression of High Speed Dv/Dt Induced False Turn-on in GaN HEMT Phase-Leg Topology

Development of GaN Power IC Platform and All GaN DC-DC Buck Converter IC

Design Of Full Gan Power Integrated Dc-Dc Converter With Over-Current Protection

Suppressing Buffer-Induced Current Collapse in GaN HEMTs with a Source-Connected P-Gan (SCPG): A Simulation Study

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A Monolithic GaN Power Stage with Common-Mode Transient Immunity and Negative Voltage Operation Design for High Frequency Power Converters

Highly Reliable Short-Circuit Protection Circuits for Gallium Nitride High-Electron-Mobility Transistors

A Novel Cascode GaN Switch Integrating Paralleled GaN DHEMTs for High-Power Applications

An Integrated Low-Power Enhanced Pull-Up GaN Driver Using SenseHEMT for Reliable and Fast Short-Circuit Protection