Abstract:As power efficiency becomes essential in automotive applications, DC-DC converters are widely employed [1]. However, size and thermal limits have made it challenging to continue using standard CMOS-based converters. Gallium Nitride (GaN) FETs, on the other hand, have a much higher conductivity with small size/capacitance in comparison to silicon FETs, enabling a highly efficient power conversion at high switching frequency (f SW ). However, there are several issues that must be resolved before using GaN in automotive. High f SW incurs larger di/dt and dv/dt transitions which injects high frequency electromagnetic interference (EMI) noise into the input bus. This creates unwanted noise or even a malfunction in a safety-critical system. A bulky input filter can reduce EMI, but it greatly increases size and cost. Several techniques [2-5] are reported to mitigate EMI. Frequency hopping using discrete frequencies is proposed in [2], but cannot spread the frequency evenly to lower the peak noise effectively. Alternatively, a series resistor is typically added at the gate of the GaN FET to slow down the transition [3-4]. However, the switching loss is dramatically increased. To mitigate this, adjustable driving strength is proposed in [5]. Unfortunately, the sensing and driver delays confine its use in low f SW applications, where the switch node rising time is several tens or hundreds of ns. Another issue of high f SW operation is that it causes significant current and voltage spikes due to the parasitics at the drain/source of the high side GaN FET (M H ), which could lead to GaN VDS breakdown or damage on logic-level FETs. Thus, EMI noise suppression and reliable operation of GaN FETs remain as major challenges in realizing high f SW power converters for automotive-use.

A 0.53ns Delay Floating-voltage Level Shifter with Ultra-high Dv/dt Immunity for GaN FETs Gate Driver Application

Fully Integrated High-Voltage Level Shifts and Drivers for Buck Converters.

Design Techniques of Sub-ns Level Shifters With Ultrahigh dV/dt Immunity for Various Wide-Bandgap Applications

A Sub-Nanosecond Level Shifter with Ultra-High Dv/dt Immunity Suitable for Wide-Bandgap Applications.

25.2 A 10mhz 3-to-40v VIN Tri-Slope Gate Driving GaN DC-DC Converter with 40.5dbµv Spurious Noise Compression and 79.3% Ringing Suppression for Automotive Applications

A Tri-Slope Gate Driving GaN DC–DC Converter with Spurious Noise Compression and Ringing Suppression for Automotive Applications

A Level Shifter for High-Side GaN Drivers with Enhanced Dv/dt Immunity and Speed

An Anti-Overcharged High-dV/dt-Immunity Capacitive Level Shifter with Dynamic Discharge Control for Half-Bridge GaN Driver

A High-Speed Low-Power Dynamic Level Shifter with High Dv/dt Immunity

A New Approach to Increase the Operating Frequency and the Duty-Cycle Range of High-Speed Level Shifter in 600V Gate Driver

A 50-V 50-Mhz High-Noise-Immunity Capacitive-Coupled Level Shifter with Digital Noise Blanker for GaN Drivers

A High-Voltage Half-Bridge Gate Drive Circuit for GaN Devices with High-Speed Low-Power and High-Noise-immunity Level Shifter

A Fully Integrated GaN Level Shifter with Negative Rail Compatibility and High dv/dt Immunity

A Novel Low Delay High-Voltage Level Shifter with Transient Performance Insensitive to Parasitic Capacitance and Transfer Voltage Level

A capacitive-loaded level shift circuit for improving the noise immunity of high voltage gate drive IC

A High-reliability Half-Bridge GaN FET Gate Driver with Advanced Floating Bias Control Techniques

A Monolithic GaN Power Stage with Low Propagation Delay and High Reliability Level Shifting for High Frequency Power Converter.

A 600V High-side Gate Drive Circuit with Ultra-low Propagation Delay for Enhancement Mode GaN Devices

Study and Implementation of 600-V High-Voltage Gate Driver IC With the Common-Mode Dual-Interlock Technique for GaN Devices

An Ultra-Low-Voltage Energy-Efficient Dynamic Fully-Regenerative Latch-Based Level-Shifter Circuit with Tunnel-FET & FinFET Devices

A 400-V Half Bridge Gate Driver for Normally-off GaN HEMTs with Effective dv/dt Control and High dv/dt Immunity