Abstract:Wide-bandgap (WBG) semiconductors have promising applications in power electronics due to their high voltages, radio frequencies, and tolerant temperatures. Among all the WBG semiconductors, SiC has attracted attention because of its high mobility, high thermal stability, and high thermal conductivity. However, the interfaces between SiC and the corresponding substrate largely affect the performance of SiC-based electronics. It is therefore necessary to understand and design the interfacial thermal transport across the SiC/substrate interfaces, which is critical for the thermal management design of these SiC-based power electronics. This work systematically investigates heat transfer across the 3C-SiC/Si, 4H-SiC/Si, and 6H-SiC/Si interfaces using non-equilibrium molecular dynamics simulations and diffuse mismatch model. We find that the room temperature ITC for 3C-SiC/Si, 4H-SiC/Si, and 6H-SiC/Si interfaces is 932 MW/m2K, 759 MW/m2K, and 697 MW/m2K, respectively. We also show the contribution of the ITC resulting from elastic scatterings at room temperature is 80% for 3C-SiC/Si interfaces, 85% for 4H-SiC/Si interfaces, and 82% for 6H-SiC/Si interfaces, respectively. We further find the ITC contributed by the elastic scattering decreases with the temperature but remains at a high ratio of 67%~78% even at an ultrahigh temperature of 1000 K. The reason for such a high elastic ITC is the large overlap between the vibrational density of states of Si and SiC at low frequencies (< ~ 18 THz), which is also demonstrated by the diffuse mismatch mode. It is interesting to find that the inelastic ITC resulting from the phonons with frequencies higher than the cutoff frequency of Si (i.e., ~18 THz) can be negligible. That may be because of the wide frequency gap between Si and SiC, which makes the inelastic scattering among these phonons challenging to meet the energy and momentum conservation rules.

First principles calculation of strain effects on the density of interface states in 4H-SiC

Influence of curvature induced stress on first principle calculation and the reliability of 4H-SiC (0001) thermally grown SiO2 gate oxide

The Effects of Stress on Interfacial Properties and Flatband Voltage Instability of 4H-Sic MOS Structures

The Effects of Surface Group Functionalization and Strain on the Electronic Structures of Two-Dimensional Silicon Carbide

First-principles calculation of the interface stability of 3C-SiC(111)/Mg(0001)

Influence on Curvature Induced Stress to the Flatband Voltage and Interface Density of 4H-Sic MOS Structure

Role of Elastic Phonon Couplings in Dictating the Thermal Transport across Atomically Sharp SiC/Si Interfaces

Modulating the Electronic Structure and Interface Contact of WSe2/CrSe2 Van Der Waals Heterostructures by Strain Engineering: Insights from First-Principles Calculations

Electronic and mechanical properties of Al (100)/6H–SiC (0001) interfaces: a first-principles study

Electronic Structures of Β-Si3n4(0001)/si(111) Interfaces: Perfect Bonding and Dangling Bond Effects

Giant enhancement of hole mobility for 4H-silicon carbide through suppressing interband electron-phonon scattering

Effects of Biaxial Strain and Functional Groups on SiC/ti(3)C(2) Heterostructure: a First Principle Calculation

Tight-binding Study of the Strained Monolayer Superlattices (si)1/(si1−xgex)1 (100)

Tailoring a two-dimensional electron gas at the LaAlO3/SrTiO3 (001) interface by epitaxial strain

First-Principles Study of Interface Relaxation Effect on Interface and Electronic Structures of Inas/Gasb Superlattices with Different Interface Types

First principles calculations of the interface properties of amorphous-Al2O3/MoS2 under non-strain and biaxial strain conditions

Theoretical investigations of a highly mismatched interface: the case of SiC/Si(001)

Calculation Of Critical Layer Thickness Considering Thermal Strain In Si1-Xgex/Si Strained-Layer Heterostructures

First-principles calculation of the band offset at BaO/BaTiO$_3$ and SrO/SrTiO$_3$ interfaces

The anisotropic ultrahigh hole mobility in strain-engineering two-dimensional penta-SiC$_2$

The influence of intrinsic point defects on the electronic band structures and swelling behaviors of 4H-SiC