Mechanism analysis and process optimization of nanogrinding single-crystal SiC
Jiangnan Xia,Qiusheng Yan,Jisheng Pan,Lijie Wu,Yuanjing Chen,Tao Wang
DOI: https://doi.org/10.1016/j.mssp.2024.108218
IF: 4.1
2024-06-01
Materials Science in Semiconductor Processing
Abstract:The aim of this study is to investigate the effects of various process parameters (the grinding-wheel speed, feed rate, workpiece speed, spark-out grinding time, and grinding-wheel granularity) on the surface quality of single-crystal SiC during nanogrinding while concurrently analysing the grinding mechanism and optimising the overall process. Experiments are performed to investigate the macrotexture and micromorphology of the single-crystal SiC surface. By employing image-processing technology, the proportion of brittle and plastic removal components is determined, thus facilitating a comprehensive analysis into the removal mechanism and the subsequent establishment of a material-removal model. The findings indicate that after grinding, the surface of single-crystal SiC exhibits a distinct grinding trajectory that radiates outwards from the centre, the density of the grinding trajectory is higher in the central area than at the periphery. The overall surface roughness increases from the centre to the edge. As the grinding-wheel speed increases, the feed rate decreases, the spark-out grinding time is prolonged, the grinding-wheel granularity increases, the abrasive cutting depth of the diamond grinding wheel decreases, the proportion of brittle removal on the surface of single-crystal SiC decreases, the proportion of plastic removal increases, the grinding groove becomes shallow, and the density of the groove increases significantly. Under the optimal process parameters, the surface roughness is reduced to 5.35 nm, and the smooth mirror effect is achieved via grinding.
engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied