Abstract:The successful combination of electromagnetic scattering simulations and optical measurements allows for the quantification of deep-subwavelength features, including thicknesses via ellipsometry and parameterized geometries via scatterometry. Although feature size reduction has slowed in recent years, nanoelectronics still yields ever-smaller structures, thus optical measurement capabilities are ever-challenged. The critical problem is that the optical properties of materials often become thickness dependent at sub-5 nm, greatly complicating accurate fitting. These optical properties can be characterized empirically using ellipsometry and used with other prior information to reduce uncertainties via hybrid metrology, but atomistic modeling offers a unique perspective on the macroscopic optical response from features with dimensions only a few atoms in width. To illustrate the potential of such modeling, we have performed a series of density-functional theory (DFT) calculations for an ultrathin film, Si with hydrogen-terminated Si(111) surfaces. Kohn-Sham wavefunctions determined in DFT are instrumental in solving for the dielectric tensor of these configurations, as the in-plane and out-of-plane components can differ greatly with respect to incident wavelength and Si thickness. Techniques for DFT and dielectric tensor determination are reviewed, highlighting both their limitations and potential for improving optics-based metrology. The thickness- and wavelength-dependence of the resulting tensor components are parameterized using Tauc-Lorentz and Lorentz oscillators. Using an illustration from goniometric reflectometry, the quantitative effects upon dimensional metrology of employing the full thickness-dependent dielectric tensor are compared against simpler approximations of these optical properties. Reductions in parametric uncertainty in the thickness and optical constants are evaluated with a prior knowledge of the ultrathin film’s thickness with uncertainties.

Thickness-Dependent Raman Scattering from Thin-Film Systems

Rigorous Prediction of Raman Intensity from Multi-Layer Films.

Quantitative Raman Spectrum and Reliable Thickness Identification for Atomic Layers on Insulating Substrates

Spatially Resolved Thickness Analysis Of Microscale Structures Using Micro-Raman Spectroscopy

Raman Scattering Characterization of Transparent Thin Film for Thermal Conductivity Measurement

Resonant Raman imaging of MoS2-substrate interaction

Thermal conductivity measurement of submicrometer-scale silicon dioxide films by an extended micro-Raman method

Micro-Raman measurement of thickness in microelectromechanical silicon structures

Measurement of the Thermal Transport Properties of Dielectric Thin Films Using the Micro-Raman Method

Size Effect on Raman Measured Stress and Strain Induced Phonon Shifts in Ultra-Thin Film Silicon

Frequency-resolved Raman Thermometry Analysis via a Multi-layer Heat Transfer Model for Bulk and Low-dimensional Materials

Thickness-dependent conductivity of nanometric semiconductor thin films

Determination of the Thickness of Two-Dimensional Transition-Metal Dichalcogenide by the Raman Intensity of the Substrate

Physical limits on Raman scattering: the critical role of pump and signal co-design

Effect of Temperature on Raman Intensity of Nm-Thick WS2: Combined Effects of Resonance Raman, Optical Properties, and Interface Optical Interference

Determining by Raman spectroscopy the average thickness and N -layer-specific surface coverages of MoS 2 thin films with domains much smaller than the laser spot size

Spectral Interferometry for Thin Film Information by Fitting Fourier Transform Spectrum

Supplementing rigorous electromagnetic modeling with atomistic simulations for optics-based metrology

Raman Scattering from Microcrystalline Films: Considerations of Composite Structures with Different Optical Absorption Properties

Thickness Dependence of Microstructure for La0.9Sr0.1MnO3/Si Films Determined by Micro-Raman Spectroscopy

Thickness Mapping and Layer Number Identification of Exfoliated van der Waals Materials by Fourier Imaging Micro-Ellipsometry