Abstract:In this article, the characteristics of linear GaN photoconductive semiconductor switch (PCSS) in high-power microwaves are investigated by Silvaco TCAD (Technology Computer-Aided Design). By comparison of optical absorption efficiency among three types of PCSS structures, the optimized Fe-doped GaN PCSS is designed in a side-illuminated, vertical structure with a spot size of $1\times $ 8 mm. The photocurrent of side-illuminated GaN vertical PCSS (vPCSS) begins to saturate at 1.65 mJ with the increase of applied optical energy. The average saturated switch resistance and electron concentration of vPCSS under a bias voltage of 5–20 kV are almost $8.2 \pmb \Omega $ and $3.5\times 10^{{14}}$ cm $^{-{3}}$ , respectively. As the device is in a saturated photocurrent state, the peak photocurrent is a linear function of bias voltage. As the device is in an unsaturated photocurrent state, improving the light energy is more effective than the withstand voltage of the device to increase photocurrent. Due to the short carrier lifetime, the GaN vPCSS has the response capacity to a 50-ps pulsewidth laser. Based on side-illuminated GaN vPCSS at the bias field 200 kV/cm, a narrowband microwave with adjustable frequency (3.3–5 GHz) could be generated. The maximum output power reaches up to 1.3 kW. Effects of anti-reflective (AR) and reflective coatings on optical absorption are investigated. The photocurrent of vPCSS with both AR and reflective coatings increases by 77.2% as compared with normal vPCSS.

Si3 N4 Passivation and Side Illumination of High-Power Photoconductive Semiconductor Switch Based on Free-Standing SI-GaN

Modeling and Simulation of Fe-Doped GaN PCSS in High-Power Microwave

Improved Photocurrent for Gallium Nitride Photoconductive Semiconductor Switch by SiO2 Anti-Reflection and (sio2|ta2o5)6 High-Reflection Dielectric Films

Electric-Field Dependence of Photocurrent Performance Characterization of Gallium Nitride Photoconductive Semiconductor Switch for Pulse Power Applications

Properties Investigation and Damage Analysis of GaN Photoconductive Semiconductor Switch Based on SiC Substrate

4H–SiC photoconductive switching devices for use in high-power applications

Study on High-Power Photoconductive Semiconductor Switches

High-Power Semi-Insulating GaAs Photoconductive Semiconductor Switch Employing Extrinsic Photoconductivity

High‐voltage Photoconductive Semiconductor Switches Fabricated on Semi‐insulating HVPE GaN:Fe Template

Experimental Study of Surface Flashover Field of SI-GaAs Photoconductive Semiconductor Switch

Investigation on the Surface Flashover of High Gain SI‐GaAs PCSS

High Performance AlGaN/GaN Power Switch with Si3N4insulation

Performance Investigation of Bulk Photoconductive Semiconductor Switch Based on Reversely Biased p + -i-n + Structure

High Power, Longevity Gallium Arsenide Photoconductive Semiconductor Switches

Developments and applications of photoconductive semiconductor switches in pulsed power technology

Study on Photoelectric Efficiency and Failure Mechanism of High Purity 4H-Sic PCSS

Optically Activated SiC Power Transistors for Pulsed-Power Application

Compatibility of AlN/SiN<sub>x</sub>Passivation With LPCVD-SiN<sub>x</sub>Gate Dielectric in GaN-Based MIS-HEMT

Surface State Passivation and Optical Properties Investigation of GaSb Via Nitrogen Plasma Treatment

Recent Progress in SiC and GaN Power Devices