Evaluation of Fe-$\beta$Ga$_{\text{2}}$O$_{\text{3}}$ for Photoconductive Semiconductor Switching
Karen M. Dowling,Bikramjit Chatterjee,Soroush Ghandiparsi,Qinghui Shao,Joel Varley,Joseph D. Schneider,Caitlin Chapin,Miranda S. Gottlieb,Laura Leos,Michael Sword,Sara Harrison,Lars Voss
DOI: https://doi.org/10.1109/ted.2024.3352528
IF: 3.1
2024-01-01
IEEE Transactions on Electron Devices
Abstract:We present iron-doped beta gallium oxide (Fe- $\beta $ Ga2O3) as a candidate for photoconductive semiconductor switches (PCSSs) with sub-bandgap light. From a commercially available Fe- $\beta $ Ga2O3 wafer, we first did material characterization. This included measurements of absorption coefficient and dopant composition, carrier activation energy up to 200 °C, break down field of planar electrodes (limited from material passivation), and free carrier recombination lifetime, and thermal effects up to 203 °C on photocurrent with a 447 nm light emitting diode (LED) source. We then demonstrated pulsed operation of a Fe- $\beta $ Ga2O3 PCSS under different sub-bandgap wavelengths (355, 532, and 1064 nm) and sub-ns pulses. Fe- $\beta $ Ga2O3 is a candidate for high temperature PCSS with 355 nm responsivity of $7\times 10^{-{7}}$ A-cm/W-kV at room temperature and up to $5.5\times 10^{-{4}}$ A-cm/W-kV at 200 °C. From these investigations, we discuss a simple trap model to describe the illumination process of the PCSS. Fe- $\beta $ Ga2O3 has a high breakdown field and has moderate responsivity characteristics, but the dark current at high temperature leads to low photo-to-dark current ratio (PDCR). Regardless, we verify its potential as a PCSS material for harsh environment applications.
engineering, electrical & electronic,physics, applied