Abstract:Increasing attention has been paid to the transducer-less thermoreflectance measurements on gallium-nitride (GaN) semiconductors to reveal their thermal properties as well as channel temperatures of GaN-based devices by employing above-bandgap light sources. However, quantitative studies of the thermoreflectance linearity for GaN-based materials are still challenging. In this work, the thermoreflectance linearity of different GaN-based epitaxial structures, including GaN on silicon carbide, GaN on silicon and GaN on sapphire substrate, under 320 nm light illumination has been studied by utilizing the transient thermoreflectance (TTR) technique. We found the thermoreflectance linear relationships are valid from room temperature to similar to 110 degrees C, similar to 180 degrees C and similar to 125 degrees C, respectively. The corresponding C-th within the linear temperature range (T-range) is 8.7E-4 degrees C-1, 5.7E-4 degrees C-1 and 3.1E-4 degrees C-1, respectively. The different non-linear relationships are also observed for the three samples at the temperature above T-range. Additionally, both theory and experiments elucidate that the thin-film interference, due to the presence of an additional AlxGa1-xN layer on top of the GaN, can affect the reflectance characteristics and ultimately the thermoreflectance linear and non-linear behaviors. Finally, the role of thermoreflectance studies in transducer-less thermal characterization is illustrated, offering an effective solution to prevent excessive measurement error caused by thermoreflectance non-linearity. This study provides a deep insight into the fundamental thermoreflectance properties of GaN-based materials at above-bandgap illumination, opening avenues for more advanced transducer-less thermoreflectance-based techniques.

Transducer-Less Thermoreflectance Technique for Measuring Thermal Properties of the Buried Buffer Layer and Interface in GaN-based HEMTs

Thermal Visualization of Buried Interfaces by Transient and Steady-State Responses of Time-Domain Thermoreflectance

Thermal Visualization of Buried Interfaces Enabled by Ratio Signal and Steady-State Heating of Time-Domain Thermoreflectance

Transient Thermal Analysis of GaN Heterojunction Transistors (HFETs) for High-Power Applications

Temperature-Dependent Thermal Impedance Measurement of GaN-Based HEMTs Using Transient Thermoreflectance

A Drain–Source Connection Technique: Thermal Resistance Measurement Method for GaN HEMTs Using TSEP at High Voltage

Thermal Characterization of GaN Heteroepitaxies Using Ultraviolet Transient Thermoreflectance

Accurate Measurement of Channel Temperature for AlGaN/GaN HEMTs

A Voltage-Transient Method for Characterizing Traps in GaN HEMTs

Observation of ballistic-diffusive thermal transport in GaN transistors using thermoreflectance thermal imaging

B13-P-01Temperature Characterization of Self-heating in GaN-based Transistors by Cathodeluminescence Spectroscopy

Measuring Temperature in GaN-based High Electron Mobility Transistors by Cathodoluminescence Spectroscopy

High Speed Transient Thermal Simulation of GaN HEMT Devices

Simultaneous Measurement of Thermal Conductivity, Heat Capacity, and Interfacial Thermal Conductance by Leveraging Negative Delay-Time Data in Time-Domain Thermoreflectance

Study on Thermoreflectance Linear Relation of Gallium Nitride Epitaxial Structures at Above-Bandgap Wavelength

Identifying the Properties of Traps in GaN High-Electron-Mobility Transistors Via Amplitude Analysis Based on the Voltage-Transient Method

Automatic In-Situ Measurement of Thermal Resistance for GaN HEMTs

Junction Temperature Measurement for HEMT Devices with Small Size Gate

Time-Resolved Structural Measurement of Thermal Resistance across a Buried Semiconductor Heterostructure Interface

Reconstruction of Thermal Boundary Resistance in Al/GaN/Al2O3 Micro-Nano Scale Multilayer Structure

Study on Thermal Transient Measurement Method and Mechanism of GaN HEMT Power Devices