Abstract:Wide-bandgap gallium nitride (GaN)-based semiconductors offer significant advantages over traditional Si-based semiconductors in terms of high-power and high-frequency operations. As it has superior properties, such as high operating temperatures, high-frequency operation, high breakdown electric field, and enhanced radiation resistance, GaN is applied in various fields, such as power electronic devices, renewable energy systems, light-emitting diodes, and radio frequency (RF) electronic devices. For example, GaN-based high-electron-mobility transistors (HEMTs) are used widely in various applications, such as 5G cellular networks, satellite communication, and radar systems. When a current flows through the transistor channels during operation, the self-heating effect (SHE) deriving from joule heat generation causes a significant increase in the temperature. Increases in the channel temperature reduce the carrier mobility and cause a shift in the threshold voltage, resulting in significant performance degradation. Moreover, temperature increases cause substantial lifetime reductions. Accordingly, GaN-based HEMTs are operated at a low power, although they have demonstrated high RF output power potential. The SHE is expected to be even more important in future advanced technology designs, such as gate-all-around field-effect transistor (GAAFET) and three-dimensional (3D) IC architectures. Materials with high thermal conductivities, such as silicon carbide (SiC) and diamond, are good candidates as substrates for heat dissipation in GaN-based semiconductors. However, the thermal boundary resistance (TBR) of the GaN/substrate interface is a bottleneck for heat dissipation. This bottleneck should be reduced optimally to enable full employment of the high thermal conductivity of the substrates. Here, we comprehensively review the experimental and simulation studies that report TBRs in GaN-on-SiC and GaN-on-diamond devices. The effects of the growth methods, growth conditions, integration methods, and interlayer structures on the TBR are summarized. This study provides guidelines for decreasing the TBR for thermal management in the design and implementation of GaN-based semiconductor devices.

Reconstruction of Thermal Boundary Resistance in Al/GaN/Al2O3 Micro-Nano Scale Multilayer Structure

Thermal Visualization of Buried Interfaces by Transient and Steady-State Responses of Time-Domain Thermoreflectance

Thermal Visualization of Buried Interfaces Enabled by Ratio Signal and Steady-State Heating of Time-Domain Thermoreflectance

Reconstruction of Thermal Boundary Resistance and Intrinsic Thermal Conductivity of SiO2-GaN-sapphire Structure and Temperature Dependence

Simultaneous measurement of cross-plane thermal conductivity and interfacial thermal conductance of nano-metal films on a low thermal diffusivity substrate using TDTR

Nanoscale Thermal Transport Across an GaAs/AlGaAs Heterostructure Interface

Low Thermal Resistance of Diamond-AlGaN Interfaces Achieved Using Carbide Interlayers

Prediction and Measurement of Thermal Transport Across Interfaces Between Semiconductor and Adjacent Layers

Enhanced Thermal Boundary Conductance across GaN/SiC Interfaces with AlN Transition Layers

Thermal transport across graphene/GaN and MoS 2 /GaN interfaces

Aln/Diamond Interface Nanoengineering for Reducing Thermal Boundary Resistance by Molecular Dynamics Simulations

Transient Dual Interface Measurement of Junction-to-case Thermal Resistance in AlGaN/GaN HEMT Utilizing an Improved Infrared Microscope

Transducer-Less Thermoreflectance Technique for Measuring Thermal Properties of the Buried Buffer Layer and Interface in GaN-based HEMTs

A Two-Sensor 3Ω-2Ω Method for Thermal Boundary Resistance Measurement

Simultaneous Measurement of Thermal Conductivity, Heat Capacity, and Interfacial Thermal Conductance by Leveraging Negative Delay-Time Data in Time-Domain Thermoreflectance

Thermal analysis of AlGaN/GaN high-electron-mobility transistors by infrared microscopy

A thermal boundary resistance measurement method based on a designed chip with the heat source separated from the temperature sensor

Thermal Boundary Conductance Enhancement Using Experimentally Achievable Nanostructured Interfaces - Analytical Study Combined with Molecular Dynamics Simulation.

Thermal Transport at the AlN-SiC Interface and Grain Boundary of AlN

Multiharmonics Method Characterizing In-Plane Thermal Conductivity and TBR of Semiconductor Nanofilm on Substrate: Theoretical Analysis

Effects of Thermal Boundary Resistance on Thermal Management of Gallium-Nitride-Based Semiconductor Devices: A Review