Abstract:Fast near‐infrared (NIR) photodetectors are vital for many applications, including optical communication and data transfer. Herein, solution‐processed AgBiS2 photodetectors with a cut‐off frequency approaching 500 kHz under NIR (940 nm) illumination, and >1 MHz under visible light are developed. The high response speed comes about because of the strong absorption of light in AgBiS2, enabling the fabrication of ultrathin photodetectors with fast charge‐extraction, which is demonstrated as heart beat sensors operating in air. Solution‐processable near‐infrared (NIR) photodetectors are urgently needed for a wide range of next‐generation electronics, including sensors, optical communications and bioimaging. However, it is rare to find photodetectors with >300 kHz cut‐off frequencies, especially in the NIR region, and many of the emerging inorganic materials explored are comprised of toxic elements, such as lead. Herein, solution‐processed AgBiS2 photodetectors with high cut‐off frequencies under both white light (>1 MHz) and NIR (approaching 500 kHz) illumination are developed. These high cut‐off frequencies are due to the short transit distances of charge‐carriers in the ultrathin photoactive layer of AgBiS2 photodetectors, which arise from the strong light absorption of this material, such that film thicknesses well below 120 nm are sufficient to absorb >65% of NIR to visible light. It is also revealed that ion migration plays a critical role in the photo‐response speed of these devices, and its detrimental effects can be mitigated by finely tuning the thickness of the photoactive layer, which is important for achieving low dark current densities as well. These outstanding characteristics enable the realization of air‐stable, real‐time heartbeat sensors based on NIR AgBiS2 photodetectors, which strongly motivates their future integration in high‐throughput systems.

Solution-prepared AgBi<sub>2</sub>I<sub>7</sub> Thin Films and Their Photodetecting Properties

Chemical bath deposition of AgBiS2 films for visible and X-ray detection

Solution-processed ZnBi2S4 polycrystalline thin films for low noise photodetection

Ultrasensitive UV-NIR broadband phototransistors based on AgBiS 2 –organic hybrid films

Low temperature atomic layer deposition of GaO x N y thin film on III-GaN:Mg for UV photodetector

Reproducible High-Performance Deep-UV Photovoltaic Photodetectors Based on Solution-Processed Ga2O3 Films

Ga 2 O 3 /GaN Heterostructural Ultraviolet Photodetectors with Exciton-Dominated Ultranarrow Response

Band Gap Engineering of AlYN Films for Solar-Blind Ultraviolet Photodetection

Solution-grown BiI/BiI3 van der Waals heterostructures for sensitive X-ray detection

Solution-processed bismuth sulfide incorporated with zinc for high-gain and low-noise photodetection

Solution-processed Hybrid Bilayer Photodetectors with Rapid Response to Ultraviolet Radiation

Fast Near‐Infrared Photodetectors Based on Nontoxic and Solution‐Processable AgBiS2

Surface Plasmon Assisted High-Performance Photodetectors Based on Hybrid TiO2@GaOxNy-Ag Heterostructure

Sensitive solution-processed Bi2S3 nanocrystalline photodetectors

Interfacial Engineering of High-Performance, Solution-Processed Sb 2 S 3 Phototransistors

Solution-Processed Sb 2 S 3 -Based Heterojunction for Self-Powered Broad Band Weak Light Detection

Bandgap Tunable ZnGaO Thin Films Grown by Atomic Layer Deposition for High-Performance Ultraviolet Photodetection

A solution-processed ternary copper halide thin films for air-stable and deep-ultraviolet-sensitive photodetector

Metal–Semiconductor–Metal Photodetectors Based on β-MgGaO Thin Films

AlGaN-based Ultraviolet Detector with Cut-off Wavelength from 307nm to 325Nm

Fast near-infrared photodetectors based on nontoxic and solution-processable AgBiS2