AlGaN-based Ultraviolet Detector with Cut-off Wavelength from 307nm to 325Nm

CEN Long-bin,SANG Li-wen,ZHOU Xu-rong,QIN Zhi-xin,ZHANG Guo-yi

DOI: https://doi.org/10.3969/j.issn.1001-5868.2007.06.010

2007-01-01

Abstract:Followed by depositing 20nm wide AlN interlayer on the GaN buffer,200nm wide Al_xGa_1-xN(0.22x0.28) was successfully extended.The conditions of Ohmic contacts formed by Ti/Al/Ni/Au layers and Schottky contacts formed by Ni layer were researched and optimized.The Ohmic resistance of Ti/Al/Ni/Au(20nm/150nm/20nm/200nm) annealed in the N_2 ambience,700℃ for 120s is 3.13×10-5Ω·cm2.It is demonstrated that when the Al mole fraction of Al_xGa_1-xN is more than 0.20,the Schottky Barrier Height between metal Ni layer and Al_xGa_1-xN is almost the same.When 10nm wide Ni deposited on the Al_xGa_1-xN is oxidated in O_2 ambience,300℃ for 90s,the transmission coefficient increases from 57.5% to 78.2% at the wavelength of 314nm.Consequently,Al_xGa_1-xN-based UV photodetectors with different cut-off wavelength are obtained.The shortest wavelength of these detectors is 307nm,and the UV/visible ratio is 3 orders of magnitude.