Abstract:High deep‐ultraviolet (DUV) sensitivity and excellent flexibility of ultrathin gallium oxide (Ga2O3) film with ultrawide bandgap endow its extreme propensity in flexible DUV photodetector. The flexible and heat‐resistant Ga2O3 DUV photodetectors based on high‐throughput low‐cost inkjet printing have been demonstrated to provide a feasible strategy for harsh‐environment space exploration and wearable electronics. High deep‐ultraviolet (DUV) sensitivity and excellent flexibility of ultrathin gallium oxide (Ga2O3) film with an ultrawide bandgap endow its extreme propensity in flexible DUV photodetector especially for space exploration and wearable electronics. However, an efficient strategy with high throughput and low cost is highly deficient to realize flexible and robust Ga2O3 DUV photodetectors to face potential harsh environments. In this work, flexible and heat‐resistant Ga2O3 DUV photodetectors based on optimized inkjet printing with environmental‐friendly aqueous solvent are demonstrated. The dynamic evolution from Ga(NO3)3 precursor to crystalline Ga2O3 film has been explicitly uncovered. Photodetectors based on printed ultrathin Ga2O3 films on rigid substrate exhibit outstanding performance, including high photo‐to‐dark current ratio about 106, considerable responsivity of 1.3 A W−1, superior detectivity of 1.46 × 1014 Jones, and fast decay time of 0.026 s under 254 nm illumination. In addition, flexible devices on mica substrate not only retain outstanding photoelectrical performance, but also demonstrate excellent mechanical flexibility and thermal stability. Moreover, benefiting from the uniformity of the pixels by high‐throughput inkjet printing, the Ga2O3 DUV photodetector array presents excellent sharp‐imaging capability. This work provides a feasible strategy for printable, flexible, and harsh‐environment‐resistant Ga2O3 DUV photodetectors toward space exploration and wearable electronics.

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Enhanced back-illuminated Ga2O3-based solar-blind ultraviolet photodetectors

Patterned Growth of Β-Ga2o3 Thin Films for Solar-Blind Deep-Ultraviolet Photodetectors Array and Optical Imaging Application

High Performance of Zero-Power-Consumption MOCVD-Grown Β-Ga2o3-based Solar-Blind Photodetectors with Ultralow Dark Current and High-Temperature Functionalities.

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Tunable Ga2O3solar-blind photosensing performance via thermal reorder engineering and energy-band modulation

Review of deep ultraviolet photodetector based on gallium oxide

High-Speed and Ultrasensitive Solar-Blind Ultraviolet Photodetectors Based on In Situ Grown β-Ga2O3 Single-Crystal Films

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Robust Deep UV Photodetectors Based on One‐Step‐Grown Polycrystalline Ga2O3 Film via Pulsed Laser Deposition toward Extreme‐Environment Application

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High-Performance Solar-Blind Ultraviolet Photodetectors Based on β-Ga 2 O 3 Thin Films Grown on p -Si(111) Substrates with Improved Material Quality via an AlN Buffer Layer Introduced by Metal-Organic Chemical Vapor Deposition

Performance Improvement of Amorphous Ga2O3/P-Si Deep Ultraviolet Photodetector by Oxygen Plasma Treatment

High-Performance Self-Driven Solar-Blind Ultraviolet Photodetectors Based on HfZrO2/β-Ga2O3 Heterojunctions

Aqueous‐Printed Ga2O3 Films for High‐Performance Flexible and Heat‐Resistant Deep Ultraviolet Photodetector and Array

High-performance -Ga<sub>2</sub>O<sub>3</sub> thickness dependent solar blind photodetector

High-performance Solar-blind and X-ray Detector Based on Ultra-thin Gallium Oxide Film Grown by MOCVD(Invited)