Abstract:The small-signal S parameters of the fabricated double-finger gate AlGaN/GaN high electron mobility transistors (HEMTs) were measured at various direct current quiescent operating points (DCQOPs). Under active bias conditions, small-signal equivalent circuit (SSEC) parameters such as Rs and Rd, and intrinsic parameters were extracted. Utilizing fT and the SSEC parameters, the effective electron velocity (νe−eff) and intrinsic electron velocity (νe−int) corresponding to each gate bias (VGS) were obtained. Under active bias conditions, the influence mechanism of VGS on νe−eff was systematically studied, and an expression was established that correlates νe−eff, νe−int, and bias-dependent parasitic resistances. Through the analysis of the main scattering mechanisms in AlGaN/GaN HEMTs, it has been discovered that the impact of VGS on νe−eff should be comprehensively analyzed from the aspects of νe−int and parasitic resistances. On the one hand, changes in VGS influence the intensity of polar optical phonon (POP) scattering and polarization Coulomb field (PCF) scattering, which lead to changes in νe−int dependent on VGS. The trend of νe−int with changes in VGS plays a dominant role in determining the trend of νe−eff with changes in VGS. On the other hand, both POP scattering and PCF scattering affect νe−eff through their impact on parasitic resistance. Since there is a difference in the additional scattering potential corresponding to the additional polarization charges (APC) between the gate-source/drain regions and the region under the gate, the mutual effects of PCF scattering on the under-gate electron system and the gate-source/drain electron system should be considered when adjusting the PCF scattering intensity through device structure optimization to improve linearity. This study contributes to a new understanding of the electron transport mechanisms in AlGaN/GaN HEMTs and provides a novel theoretical basis for improving device performance.

Bias Dependence of Non-Fourier Heat Spreading in GaN HEMTs

Thermal spreading resistance of GaN HEMTs with heat source heating studied by hybrid Monte Carlo-diffusion simulations

Two-temperature Principle for Evaluating Electrothermal Performance of GaN HEMTs

Two-Temperature Principle for Electrothermal Performance Evaluation of GaN HEMTs

Thermal Spreading Resistance in Ballistic-Diffusive Regime for GaN HEMTs

Investigation on Thermo-Mechanical Responses in High Power Multi-Finger AlGaN/GaN HEMTs

Impacts of diamond heat spreader on the thermo-mechanical characteristics of high-power AlGaN/GaN HEMTs

Hybrid Monte Carlo-Diffusion Studies of Modeling Self-Heating in Ballistic-Diffusive Regime for Gallium Nitride HEMTs

Thermal Effect Simulation of GaN HFETs under CW and Pulsed Operation.

Transient Thermal Analysis of GaN Heterojunction Transistors (HFETs) for High-Power Applications

Numerical investigation on thermal characteristics of GaN HFETs for high power applications

Near-junction phonon thermal spreading in GaN HEMTs: A comparative study of simulation techniques by full-band phonon Monte Carlo method

Electro-Thermal Simulation of GaN HEMT by Finite Element Method

Electron Heat Source Driven Heat Transport in GaN at Nanoscale: Electron–Phonon Monte Carlo Simulations and a Two Temperature Model

Multiphysics Simulation Study of Thermal Stress Effects in Nanoscale FinFETs Heterogeneously Integrated with GaN High-Power Device on Silicon Substrate

Nonlinear Thermal Analysis of AlGaN/GaN HEMTs With Temperature-Dependent Parameters

Influence of the Bias Voltage on Effective Electron Velocity in AlGaN/GaN High Electron Mobility Transistors

Spectral Thermal Spreading Resistance of Wide-Bandgap Semiconductors in Ballistic-Diffusive Regime

Study of Self-Heating and High-Power Microwave Effects for Enhancement-Mode p-Gate GaN HEMT

Phonon thermal transport and its tunability in GaN for near-junction thermal management of electronics: A review

Electro-Thermal Simulation of GaN HEMT Based on a Scaling-Factor-Enhanced Time-Domain Spectral Element Solver