Abstract:With the purpose to continuously improve the speed and density of chip operation, the size of the transistors and the spacing between the transistors have been shrinking, following what is called the Moore's law in the last 40 years. When the logic process node reaches 3 nm or smaller, the room for the improvement in FinFET architecture is no longer available. Complementary FET (CFET) structure has been proposed to continue the performance improvement through area reduction with the NMOS placed on top of the PMOS. In this paper, through the use of a self-developed simulation program, we study the typical design rule patterns of the back-end-of-line (BEOL) metal and via layers from 3 nm and 2 nm logic processes. From the development roadmap of transistors, it can be seen that the pitch of BEOL metal layer from 3 nm CFET is around 20~24 nm, which can be realized by 0.33 NA Extreme Ultra-Violet (EUV) lithography with double pattering scheme using self-aligned litho-etch-litho-etch (SALELE) process. Taking 40~48 nm as the anchoring pitch, in order to obtain enough process windows, we make detailed design rules for some typical 2D patterns (such as dense pattern, semi-dense pattern, isolated pattern, Tip-to- Tip (TtT) and Tip-to-Line (TtL) patterns, etc.), and we can also calculate the minimum area of isolated patterns. The pitch of BEOL metal layer from 2 nm FinFET is assumed to be 14~18 nm, for which we have done process window simulation under both 0.33 NA and 0.55 NA EUV processes. We will compare both exposure processes on exposure energy, exposure latitude, line width roughness, and defect density originated from photon absorption stochastics. We will present a study on both the process cost and performance for the 3 and 2 nm photo processes.

A MEOL Logic Layout Optimization Recommendation under 3 Nm CFET Architecture and Beyond

HD SRAM Bitcell Size Shrink Beyond 7nm Node by CFET Without EUV

CFET 6T HD SRAM Designs with 3nm Design Rule

On the SRAM with Comb-Shaped Nano FETs Advancing to 3 Nm Node and Beyond

Area efficient layout design of CMOS circuit for high-density ICs

Hybrid Integration of Gate-All-Around Stacked Si Nanosheet FET and Si/SiGe Super-Lattice FinFET to Optimize 6T-SRAM for N3 Node and Beyond

A Dual Core Oxide 8T SRAM Cell with Low Vccmin and Dual Voltage Supplies in 45nm Triple Gate Oxide and Multi Vt CMOS for Very High Performance Yet Low Leakage Mobile SoC Applications

The Discussion of the Typical BEOL Design Rules from 3 Nm to 2 Nm Logic Process with EUV and High NA EUV Lithography

Carbon-Based Three-Dimensional SRAM Cell with Minimum Inter-Layer Area Skew Considering Process Imperfections

Robust Monolithic 3D Carbon-Based Computing-in-SRAM with Variation-Aware Bit-Wise Data-Mapping for High-Performance and Integration Density

Logic-Based Mega-Bit CuxSiyO emRRAM with Excellent Scalability Down to 22nm Node for post-emFLASH SOC Era

Self-heating Effect on Logic Performance of 6T-SRAM Based on CFET Device

Layout Aware Optimization Methodology for SOT-MRAM Based on Technically Feasible Top-Pinned Magnetic Tunnel Junction Process

Fully CMOS Compatible 3D Vertical RRAM with Self-Aligned Self-Selective Cell Enabling Sub-5Nm Scaling

Investigation of Novel Hybrid Channel Complementary FET Scaling Beyond 3-nm Node From Device to Circuit

Carbon Nanotube SRAM in 5-Nm Technology Node Design, Optimization, and Performance Evaluation—Part II: CNT Interconnect Optimization

A Novel Zigzag SRAM Bitcell Design in the Complementary FET Framework

A Novel CMOS FEOL-Embedded Asymmetrical FET for Capacitor-less and Long-Retention DRAM Based on 300mm Logic Foundry Platform

A Monolithic-3D SRAM Design with Enhanced Robustness and In-Memory Computation Support

Design of an Area-Efficient Computing in Memory Platform Based on STT-MRAM

Enhanced Logic Gates And Sram Based On Reconfigurable Field-Effect Transistor With Asymmetric Spacer Engineering