Abstract:With the development of electronic technology, semiconductor memory is gradually shifting toward smaller area with less power consumption. SOT-MRAM is one of the competitive substitutes for DRAM and SRAM due to its superior endurance and switching speed. In contrast to STT-MRAM, the separation of read and write routes allows SOT-MRAM to have a lower error rate and higher lifetime, but this comes at the expense of the memory density. In recent years, vertical integrated circuits have relied on TSV to complete 3D stacking to ease the pressure of Moore's Law on scaling circuits. SOT-MRAM can take advantage of 3D stacking to reduce power and latency. More importantly, the density of SOT-MRAM can be improved at the same time. In the paper, simulation is conducted based on DESTINY, with the TSV model supplemented to NVSIM to evaluate the performance of MRAM 3D structures. The 3D SOT-MRAM structure in DESTINY can be implemented with a bus layer and interconnect structure between layers, which greatly reduces the expense of area. However, the 3D structure requires a more complex interconnect structure to truly meet the requirements of high density. For this reason, 3D model of unit interconnection using TSV is presented in the paper. Memory has several components, of which the memory array is the one with the largest area share. This paper explores the spatial structure of the array and proposes a new model which allows more complex interconnect structures to be accomplished on the same area.

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Variation Aware Evaluation Approach and Design Methodology for SOT-MRAM

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Area-Aware Optimization of MRAM Crossbar Array Bit-Cell for In-Memory Computing

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Optimization of the 3D multi-level SOT-MRAMs

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Architectural Exploration to Enable Sufficient MTJ Device Write Margin for STT-RAM Based Cache

Evaluation Of Ultrahigh-Speed Magnetic Memories Using Field-Free Spin-Orbit Torque

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Design of an Area-Efficient Computing in Memory Platform Based on STT-MRAM

Complementary Polarizer SOT-MRAM for Low-Power and Robust On-Chip Memory Applications

Energy Efficient Computing with High-Density, Field-Free STT-Assisted SOT-MRAM (SAS-MRAM)

A SOT-MRAM Based CIM Design with Multi-Bit Resistance-Sum Paradigm and Non-Idealities Tuning Mechanism

Reconfigurable Codesign of Stt-Mram under Process Variations in Deeply Scaled Technology

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Design Techniques to Improve the Device Write Margin for MRAM-based Cache Memory

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