Abstract:An SRAM (static random access memory)-based reprogrammable FPGA (field programmable gate array) is investigated for space applications. A new commercial prototype, named the RS family, was used as an example for the investigation. The device is fabricated in a 0.25 /spl mu/m CMOS technology. Its architecture is reviewed to provide a better understanding of the impact of single event upset (SEU) on the device during operation. The SEU effect of different memories available on the device is evaluated. Heavy ion test data and SPICE simulations are used integrally to extract the threshold LET (linear energy transfer). Together with the saturation cross-section measurement from the layout, a rate prediction is done on each memory type. The SEU in the configuration SRAM is identified as the dominant failure mode and is discussed in detail. The single event transient error in combinational logic is also investigated and simulated by SPICE. SEU mitigation by hardening the memories and employing EDAC (error detection and correction) at the device level are presented. For the configuration SRAM (CSRAM) cell, the trade-off between resistor dc-coupling and redundancy hardening techniques are investigated with interesting results. Preliminary heavy ion test data show no sign of SEL (single event latch-up). With regard to ionizing radiation effects, the increase in static leakage current (static I/sub CC/) measured indicates a device tolerance of approximately 50 krad(Si).

Enhanced Logic Gates And Sram Based On Reconfigurable Field-Effect Transistor With Asymmetric Spacer Engineering

Novel Reconfigurable Field-Effect Transistor with Asymmetric Spacer Engineering at Drain Side

Self-heating Effect on Logic Performance of 6T-SRAM Based on CFET Device

Invetigation of reconfigurable silicon nanowire Schottky Barrier transistors-based logic gate circuits and SRAM cell

RRAM Mirrored and RRAM-Transistor Hybrid Single Device Logic Gates Based on Two-Dimensional Materials

Reconfigurable Field Effect Transistors Design Solutions for Delay-Invariant Logic Gates

Reconfigurable Si Field-Effect Transistors With Symmetric On-States Enabling Adaptive Complementary and Combinational Logic

TCAD Simulations of Reconfigurable Field-Effect Transistor with Embedded-Fin-Contact to Improve On-Current

A Novel Nanosheet Reconfigurable Field Effect Transistor with Dual-Doped Source/drain

Novel Reconfigurable Field-Effect Transistor with Arch-Shaped Gate to Improve On-State Current

Novel Reconfigurable Field-Effect Transistor with Surrounded Source/Drain to Improve On-State Current

Experimental Demonstration of Non-volatile Boolean Logic with Field Configurable 1Fefet-1Rram Technology

Electronic Assessment of Novel Arch-Shaped Asymmetrical Reconfigurable Field-Effect Transistor

Complete Reconfigurable Boolean Logic Gates Based on One FeFET -One RRAM Technology

Analysis of Metal Work-Function Modulation Effect in Reconfigurable Field-Effect Transistor

A Novel TFET-MOSFET Hybrid SRAM for Ultra-Low-Power Applications

Ge-based Non-Volatile Logic-Memory Hybrid Devices for NAND Memory Application

The Optimization of Spacer Engineering for Capacitor-Less DRAM Based on the Dual-Gate Tunneling Transistor

Evaluation of Single-Event-Transient Effects in Reconfigurable Field Effect Transistor Beyond 3 Nm Technology Node

A MEOL Logic Layout Optimization Recommendation under 3 Nm CFET Architecture and Beyond

SRAM based re-programmable FPGA for space applications