Thermal Oxidation Mechanism and Kinetics of SiB<sub>4</sub> at Elevated Temperature

Sun Yulei,Li Mingwei,Zhang Qingmeng,Yang Zhimin,Zhong Yesheng,Shi Liping,He Xiaodong
2022-01-01
Rare Metal Materials and Engineering
Abstract:In this work, the high-temperature thermal oxidation process and kinetics of SiB4 powder (particle size similar to 40 mu m), which is usually applied as key filler for high-emissivity coating on the surface of hypersonic vehicle, were investigated by non-isothermal thermogravimetric analysis under air condition. The results show that the thermal oxidation of SiB4 starts at 650 degrees C and their mass along the thermal oxidation process shows a trend of constant mass -> mass gaining -> constant mass. The second constant mass stage occurring at high-temperature region is controlled by two mechanisms, namely, the protective effect of glass encapsulation and the competitive effect of oxidation mass gaining and volatilization of gas species. The heating rate has a significant effect on SiB4 oxidation process, and the faster temperature rises, the more obvious exothermic effect is. The average active energy of SiB4 powder is 239.14 kJ/mol. The kinetic preexponential factor is 9.8696x10(9) s(-1). The conversion function of oxidation reaction of SiB4 is G(alpha)=ln[-ln(1-alpha)](1.7574).
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