Study on the oxidation mechanism of Al-SiC composite at elevated temperature
Jishuo Han,Yong Li,Chenhong Ma,Qingyao Zheng,Xiuhua Zhang,Xiaofang Wu
DOI: https://doi.org/10.1007/s12613-023-2778-3
2024-09-01
International Journal of Minerals Metallurgy and Materials
Abstract:Resin-bonded Al-SiC composite was sintered at 1100, 1300, and 1500°C in the air, the oxidation mechanism was investigated. The reaction models were also established. The oxidation resistance of the Al-SiC composite was significantly enhanced with temperature increase. SiC in the exterior of the composite was partially oxidized slightly, while the transformation of metastable Al 4 C 3 to stable Al 4 SiC 4 existed in the interior. At 1100°C, Al in the interior reacted with residual C to form Al 4 C 3 . With increasing to 1300°C, high temperature and low oxygen partial pressure lead to active oxidation of SiC, and internal gas composition transforms to Al 2 O(g) + CO(g) + SiO(g) as the reaction proceeds. After Al 4 C 3 is formed, CO(g) and SiO(g) are continuously deposited on its surface, transforming to Al 4 SiC 4 . At 1500°C, a dense layer consisting of SiC and Al 4 SiC 4 whiskers is formed which cuts off the diffusion channel of oxygen. The active oxidation of SiC is accelerated, enabling more gas to participate in the synthesis of Al 4 SiC 4 , eventually forming hexagonal lamellar Al 4 SiC 4 with mutual accumulation between SiC particles. Introducing Al enhances the oxidation resistance of SiC. In addition, the in situ generated non-oxide is uniformly dispersed on a micro-scale and bonds SiC stably.
materials science, multidisciplinary,metallurgy & metallurgical engineering,mining & mineral processing