Abstract:Quartz Crucibles with large sizes are widely used in the production of rods for monocrystalline silicon in photovoltaic industry. Defects on the inner surface of aspheric crucibles should be removed at a high material removal rate (MRR), and atomic surface is strictly demanded. This is a challenge for chemical mechanical polishing (CMP), because of that CMP is usually applied to flat surface, rather than aspheric surface. Furthermore, traditional CMP normally employs noxious slurries, resulting in the potential pollution to the environment. To solve these challenges, a novel green CMP was developed, containing ceria, ytterbia, hydrogen peroxide, guar gum, potassium carbonate and disodium ethylenediamine tetraacetate. After CMP, atomics surface was achieved with surface roughness Sa of 0.122 nm at a measurement area of 100 x 100 mu m2, and the MRR is 31.56 mu m/h. Thickness of damaged layer is only 2.55 nm confirmed by transmission electron microscopy (TEM), which is the lowest value compared with those published previously. The developed CMP was applied to aspheric crucibles with a diameter of 810 mm, thickness of 15 mm and height of 580 mm. The surface roughness Sa of 0.361 nm was obtained, which is one order of magnitude lower than 2.648 nm through conventional mechanical polishing. Molecular dynamics (MD) simulations of nanoindentation and nanoscratch reveal that damaged layer was formed by densification of atoms at the surface. X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy elucidate the mechanisms of developed green CMP. The content of trivalent Ce3+ increases, through the reduction of hydrogen peroxide and induction of trivalent oxides of rare earths, such as ceria and ytterbia. Experimental results confirm that content of Ce3+ was enhanced to 37.75 %, and the MRR was improved about 54.77 %. During CMP, a soft silicate layer was generated, which is easy to be removed by abrasives of rare earth oxides. At the same time, Ce-O-Si groups were formed via the dehydration and condensation between Si-OH and Ce-OH groups. The two -OH groups were formed by hydroxylation during CMP, and Ce-O-Si groups could be removed easily. With the coupling between chemical and mechanical functions, atomic surface was achieved at a high MRR. Our findings provide new insights to produce atomic surface on aspheric quartz crucibles with large sizes at a high MRR, which is beneficial for photovoltaic industry.

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