Abstract:Leveraging from thickness control methodology, vertical ferroelectric polarization switching is recorded on a 6 nm thick specimen probed by a piezoresponse force microscopy. The ferroelectric origin is uncovered by first‐principles density‐functional theory calculations. Bi2O2Se‐based field‐effect transistor demonstrated an unprecedented current on–off ratio of 108 and carrier mobility of 131 cm2 V−1 s−1. This work manifests the feasibility of 2D Bi2O2Se for next‐generation electronics. The amelioration of atomically thin ferroelectric materials is imperative for next‐generation outperformed two‐dimensional (2D) electronics, which is elusive by their bulk counterparts. These remarkable materials' ferroelectric and piezoelectric features are the fundamental urges in optoelectronics, electronics, and energy harvesting. In this work, 2D ferroelectric Bi2O2Se flakes have been synthesized using a modified chemical vapor deposition technique. The 6 nm thick Bi2O2Se flake provides a robust ferroelectric switching under an applied voltage of ±10 V by piezoresponse force microscopy, further confirmed by first principles. Leveraging the successful growth, the high‐quality Bi2O2Se flakes permit the fabrication of a field‐effect transistor (FET) with state‐of‐the‐art performance. The FET device rewards a high current on–off ratio of 108 and field effect mobility of almost 131 cm2 V−1 s−1, owing to the small carrier effective mass of 0.2 m0. Combined, the electric field‐induced local polarization of ferroelectric switching and unprecedented device performance of Bi2O2Se semiconductors are certified for their utilization in advanced nanoelectronics and miniaturization of multifunctional devices with multifunctionalities.

Coexistence of Anisotropic Large Magnetoresistance and Ferroelectricity in Two-Dimensional Narrow-Bandgap Bi2O2Te

Direct observation of room-temperature out-of-plane ferroelectricity and tunneling electroresistance at the two-dimensional limit

Anisotropic Bi2O2Se(Te) Monolayer: Realizing Ultra-High Carrier Mobility and Giant Electric Polarization in Two-Dimension

2D Bi2O2Te Semiconductor with Single‐Crystal Native Oxide Layer

Electron Transport Properties of a Narrow-Bandgap Semiconductor Bi2O2Te Nanosheet

Electron transport properties of a narrow-bandgap semiconductor Bi$_2$O$_2$Te nanosheet

Bismuth Oxychalcogenides: A New Class of Ferroelectric/Ferroelastic Materials with Ultra High Mobility

Nonsaturating Linear Magnetoresistance Manifesting Two-Dimensional Transport in Wet-Chemical Patternable Bi2O2Te Thin Films.

Nonsaturating Linear Magnetoresistance Manifesting Two-Dimensional Transport in Wet-Chemical Patternable Bi 2 O 2 Te Thin Films

Continuously tunable ferroelectric domain width down to the single-atomic limit in bismuth tellurite

The Robust Ferroelectric and Electrical Response in 2D Bi2O2Se Semiconductor

Robust ferroelectric-gating-dependent electronic and magnetic properties in a 1T-VSe2/BiAlO3(0001) multiferroic heterostructure

High Mobility and Quantum Oscillations in Semiconducting Bi2O2Te Nanosheets Grown by Chemical Vapor Deposition

Highly In-Plane Anisotropies of Mechanical Properties and Extraordinary Sunlight Absorption in Layered Wide Bandgap Semiconductors: Bi2XO5 (x=se, Te)

Large Switchable Photoconduction within 2D Potential Well of a Layered Ferroelectric Heterostructure

Nonvolatile Ferroelectric Control of Electronic Properties of Bi 2 Te 3

Nonvolatile and Reversible Ferroelectric Control of Electronic Properties of Bi2Te3 Topological Insulator Thin Films Grown on Pb(Mg1/3Nb2/3)O3-PbTiO3 Single Crystals.

Tunable Magnetic Order in Transition Metal Doped, Layered, and Anisotropic Bi2O2Se: Competition Between Exchange Interaction Mechanisms

Tunable magnetic anisotropy, Curie temperature and band alignment of two-dimensional ferromagnet VSiSnN4 via non-volatile ferroelectrical control

Ferroelectric and Strain-Tuned MoSe2/Bi2O2Se Van Der Waals Heterostructure with Band Alignment Evolution

Anisotropic magnetoresistance in topological insulator Bi1.5Sb0.5Te1.8Se1.2/CoFe heterostructures