Abstract:This article investigates an improved 4H-SiC trench gate metal–oxide–semiconductor field-effect transistor (MOSFET) (UMOSFET) fitted with a super-junction (SJ) shielded region. The modified structure is composed of two n-type conductive pillars, three p-type conductive pillars, an oxide trench under the gate, and a light n-type current spreading layer (NCSL) under the p-body. The n-type conductive pillars and the light n-type current spreading layer provide two paths to and promote the diffusion of a transverse current in the epitaxial layer, thus improving the specific on-resistance (R on,sp). There are three p-type pillars in the modified structure, with the p-type pillars on both sides playing the same role. The p-type conductive pillars relieve the electric field (E-field) in the corner of the trench bottom. Two-dimensional simulation (silvaco TCAD) indicates that R on,sp of the modified structure, and breakdown voltage (V BR) are improved by 22.2% and 21.1% respectively, while the maximum figure of merit ( FOM=VBR2/Ron,sp ) is improved by 79.0%. Furthermore, the improved structure achieves a light smaller low gate-to-drain charge (Q gd) and when compared with the conventional UMOSFET (conventional-UMOS), it displays great advantages for reducing the switching energy loss. These advantages are due to the fact that the p-type conductive pillars and n-type conductive pillars configured under the gate provide a substantial charge balance, which also enables the charge carriers to be extracted quickly. In the end, under the condition of the same total charge quantity, the simulation comparison of gate charge and OFF-state characteristics between Gauss-doped structure and uniform-doped structure shows that Gauss-doped structure increases the V BR of the device without degradation of dynamic performance.

Split-gate Trench Metal-Oxide-semiconductor Field Effect Transistor with an Inverted L-shaped Source Region.

A Split Gate Power FINFET with Improved ON-Resistance and Switching Performance

Study of the SOI LDMOS with Low Conduction Loss and Less Gate Charge

4H-Sic Trench Gate Lateral MOSFET with Deep-Shallow Source Trench for Improved RESURF Dose Window and Reduced Oxide Field

4H-Sic Trench Gate Lateral MOSFET with Dual Source Trenches for Improved Performance and Reliability

A Novel High Voltage SOI LIGBT with Split Gate and Carrier Stored Layer

Mechanisms and Characteristics of a Low-Loss Split Gate Trench MOSFET with Shield Layer

A Dual-Gate IGZO Source-Gated Transistor Based on Field Modulation by TCAD Simulation

Simulation Study of a Novel 4H-Sic Split Gate Double Trench MOSFET with Side Wall Gate

Shield Gate Trench MOSFET with Narrow Gate Architecture and Low-k Dielectric Layer

Improved 4H-Sic UMOSFET with Super-Junction Shield Region

A Dual-Gate and Dielectric-Inserted Lateral Trench Insulated Gate Bipolar Transistor on a Silicon-on-insulator Substrate

Enhancing subthreshold slope and ON-current in a simple iTFET with overlapping gate on source-contact, drain Schottky contact, and intrinsic SiGe-pocket

Low Switching Loss and Increased Short-Circuit Capability Split-Gate SiC Trench MOSFET with p-type pillar

High-Performance Schottky-Barrier IGZO Thin-Film Transistors Based on Ohmic/Schottky Hybrid Contacts

An Injection Enhanced LIGBT on Thin SOI Layer Compatible with CMOS Process

An Ultra-Low Specific ON-Resistance LDMOST With Self-Driven Split Gate

An elevated source/drain-on-insulator structure to maximize the intrinsic performance of extremely scaled MOSFETs

A Low Gate Charge Field-Plate Trench MOSFET with Hollow Split Gate Structure

A study of source/drain-on-insulator structure for extremely scaled MOSFETs

Mechanism and Novel Structure for di/dt Controllability in U-Shaped Channel Silicon-on-Insulator Lateral IGBTs