Abstract:Tunable photoluminescent nitrogen-doped graphene and graphitic carbon nitride (g-C3N4) quantum dots are synthesized via a facile solid-phase microwave-assisted (SPMA) technique utilizing the pyrolysis of citric acid and urea precursors. The atomic ratio, surface functionalization, and atomic structure of as-prepared quantum dots strongly depend on the ratio of citric acid to urea. The quantum dots have a homogeneous particle size and tend to form a circle and/or ellipse shape to minimize the edge free energy. The atomic ratio of surface nitrogen to carbon (N/C) in the quantum dots can reach as high as 1.74, among the highest values reported in the literature. The SPMA technique is capable of producing high-quality quantum dots with photoluminescence (PL) emission at various wavelengths on a pilot scale. The atomic structures of the N-doped graphene and g-C3N4 quantum dots are explored using molecular dynamics simulations. Increasing the urea concentration increases the tendency of in-plane N (i.e., quaternary N) substitution over that of other amino functionalizations, such as pyrrolic and pyridinic N. The PL emission can be precisely tuned via a one-step SPMA method by adjusting the precursor composition. A high quantum yield of 38.7% is achieved with N-doped graphene quantum dots, indicating the substantial influence of the N- and O-rich edge groups on the enhancement of PL efficiency. A bandgap structure is proposed to describe the interstate (π*–π) transition of quantum dots. This work introduces a novel approach for engineering the chemical composition and atomic structure of graphene and g-C3N4 quantum dots, facilitating their research and applications in optical, electronic, and biomedical devices.

Synthesis of N-doped SiC Nano-Powders with Effective Microwave Absorption and Enhanced Photoluminescence

Optimization of Microstructure to Improve Si3n4 Ceramics with Thermal Conductivity and Mechanical Properties: Effect of Si and Α-Si3n4 Powder Composition

Microwave growth and tunable photoluminescence of nitrogen-doped graphene and carbon nitride quantum dots

Deposition and Thermoelectric Properties of N-Doped SiC Thick Films

One-step synthesis of SiC/C nanocomposites by atmospheric thermal plasmas for efficient microwave absorption

Doping Efficiency, Dopant Location, and Oxidation of Si Nanocrystals

Synergetic enhancement of electrical conductivity and infrared emissivity of SiC-MoSi2 ceramics via N doping

Modification of plasma-generated SiC nanoparticles by heat treatment under air atmosphere

Doped Silicon Nanocrystals From Organic Dopant Precursor By A Sicl4-Based High Frequency Nonthermal Plasma

Dielectric and infrared properties of silicon carbide nanopowders

In Situ Growth of One-Dimensional Nanowires on Porous PDC-SiC/Si3N4 Ceramics with Excellent Microwave Absorption Properties

Facile synthesis of hollow SiC/C nanospheres for high-performance electromagnetic wave absorption

Fabrication of novel silicon carbide‐based nanomaterials with unique hydrophobicity and microwave absorption property

Molten-salt-mediated synthesis of SiC nanowires for microwave absorption applications

Preparation, mechanical, dielectric and microwave absorption properties of hierarchical porous SiCnw-Si3N4 composite ceramics

Synthesis and investigation of the physicochemical properties of polymorphic 3C–SiC

Controllable growth of high-density tapered N-doped SiC nanowires arrays

Microwave-absorption Properties of Heterostructural SiC Nanowires/sioc Ceramic Derived from Polysiloxane

Doping Effect in Si Nanocrystals/SiO2 Multilayers

Increased microwave absorption property of porous Si3N4 ceramics by loading polymer-derived SiCN for a multifunctional design

Fabrication of ultra-small SiC nanoparticles with adjustable size, stoichiometry and photoluminescence by AC multi-arc plasmas