Abstract:Precise fabrication of semiconducting channel materials into densely-aligned uniformly parallel arrays is one prerequisite to the high-performance ultra-scaled technology nodes, in particular for carbon nanotubes (CNTs). Traditional thin-film-based approaches generally yield CNTs in irregularly-spaced bundles or with wide orientation distribution, and lack a mechanism to effectively eliminate mis-aligned CNTs from the ultra-scaled channel area. Therefore, the averaged pitch value and precision of CNT arrays, the key parameters defining lateral CNT spacing, fail to simultaneously meet all of the patterning requirements for the ultra-scaled technology nodes. Bio-fabrication is promising for patterning CNTls at a resolution beyond the existing lithographic limit. However, impacted by surface charges and sub-micron dimensions of typical bio-templates, current bio-templated electronics exhibit both poor transport performance and array uniformity smaller than 1 micron. We report precise scaling of inter-CNT pitch using a supramolecular assembly method called Spatially Hindered Integration of Nanowire Electronics (SHINE). Specifically, by using nano-trenches to align CNTs and DNA hybridization to stabilize them in place, we constructed parallel CNT arrays with uniform pitch as small as 10.4 nm, at an assembly yield over 95%. The pitch precision improves on that prepared from conventional thin-film approaches by more than two orders of magnitude. Compared to the lithography-patterned Si channels at 10 nm technology node, SHINE simultaneously provides both 70% smaller averaged pitch value and molecular-scale pitch precision in the channel area. By engineering the interfacial compositions, metal ions and surface charges that are destructive to FET performance have been excluded from the channel area without degrading CNT alignment. Under a source-to-drain voltage of -0.5 V, we demonstrate both transconductance more than 0.6 mS/μm with fast on/off switching. And the key FET performance metrics are improved by more than one order of magnitude than previous bio-templated FETs. Furthermore, we demonstrate centimeter-scale alignment of fixed-width CNT arrays. At the interface of high-performance electronics and bio-molecular self-assembly, precise bio-fabrication could provide ultra-scaled devices or circuits compatible with or sensitive to local biological environments.

Length-dependent Alignment of Large-Area Semiconducting Carbon Nanotubes Self-Assembly on a Liquid-Liquid Interface

Aligned, high-density semiconducting carbon nanotube arrays for high-performance electronics

Improving the Performance of Aligned Carbon Nanotube-Based Transistors by Refreshing the Substrate Surface.

Carbon Nanotube Materials for Future Integrated Circuit Applications

Assembly and Alignment of High Packing Density Carbon Nanotube Arrays Using Lithographically Defined Microscopic Water Features

Aligning Solution-Derived Carbon Nanotube Film with Full Surface Coverage for High-Performance Electronics Applications.

Aligned 2D carbon nanotube liquid crystals for wafer-scale electronics

Scalable Preparation of High-Density Semiconducting Carbon Nanotube Arrays for High-Performance Field-Effect Transistors.

Aligned Single-Walled Carbon Nanotube Patterns with Nanoscale Width, Micron-Scale Length and Controllable Pitch

Wafer-scale Monodomain Films of Spontaneously Aligned Single-Walled Carbon Nanotubes

Langmuir blodgett assembly of densely aligned single walled carbon nanotubes from bulk materials

Using Nanoscale Thermocapillary Flows to Create Arrays of Purely Semiconducting Single-Walled Carbon Nanotubes

Growth Of High-Density-Aligned And Semiconducting-Enriched Single-Walled Carbon Nanotubes: Decoupling The Conflict Between Density And Selectivity

(Invited) DNA-Directed High-Precision Assembly of CNT FETs

Realizing Controllable Carbon Nanotube Arrays for Soft Devices by Asymmetric Langmuir–Blodgett and Hydrophilization Process

Ultra-high density alignment of carbon nanotubes array by dielectrophoresis

Fabrication of Carbon Nanotube Field-Effect Transistors by Fluidic Alignment Technique

Aligned carbon nanotube field effect transistors by repeated compression-expansion cycles in Langmuir-Blodgett

Nonideality in Arrayed Carbon Nanotube Field Effect Transistors Revealed by High-Resolution Transmission Electron Microscopy

Retracted: Combined Printing of Highly Aligned Single‐Walled Carbon Nanotube Thin Films with Liquid Metal for Direct Fabrication of Functional Electronic Devices

Soft-lock drawing of super-aligned carbon nanotube bundles for nanometre electrical contacts