Abstract:Ion migration as well as electron transfer and coupling in resistive switching materials endow memristors with a physically tunable conductance to resemble synapses, neurons, and their networks. Four different types of volatile memristors and another four types of nonvolatile memristors are systemically surveyed in terms of the switching mechanisms and electrical properties that are the basis of different computing applications. The volatile memristor features spontaneous conductance decay after the cease of electrical/optical stimulations, which are closely related to the surface atom diffusion, metal–insulator–transition (including charge–density–wave), thermal spontaneous emission, and charge polarization. Such unique dynamic state evolution at the edge of chaos has enabled them to emulate certain synaptic and neural dynamics, leading to various applications ranging from spiking neural networks to combinatorial optimizations. Nonvolatile resistive switching behavior originated from the electron spins, ferroelectric polarization, crystalline‐amorphous transitions or interplay between ions and electrons enables the memristor array to implement the vector–matrix multiplication, which is the key convolutional operation in artificial neural networks. The progress, challenges, and opportunities for both volatile and nonvolatile memristor in the level of materials, integration technology, algorithm, and system are highlighted in this review. Four volatile memristors and four nonvolatile memristors in terms of the switching dynamics, application in neuromorphic computing, and architectures of memristor arrays are systemically summarized. The motivation of this review is to refine the conception of volatile and nonvolatile memristor, summarizes the important progress in hardware technology, and proposes the possible solutions in different level for memristor‐based neuromorphic computing.

Effect of Temperature on Electrical Characteristics of NbOx Volatile Memristor

High Frequency Response of Volatile Memristors

Memristors with Tunable Characteristics Based on the Tellurene/nb-Doped MoS2 Heterojunction Toward Bio-Realistic Synaptic Emulation

Fatigue of NbOx-Based Locally Active Memristors—Part II: Mechanisms and Modeling

Thermal Conductivity of Amorphous NbOx Thin Films and Its Effect on Volatile Memristive Switching

Microscopic Modeling and Optimization of NbOx Mott Memristor for Artificial Neuron Applications

Neuronal Firing Characteristics in the NbO2 Based Mott Memristor

High Spatial Resolution Thermal Mapping of Volatile Switching in NbOx-Based Memristor Using In Situ Scanning Thermal Microscopy.

Electrically-driven IMT and volatile memristor behavior in NdNiO 3 films

Enhancement in neuromorphic NbO2 memristive device switching at cryogenic temperatures

A model of TaOx threshold switching memristor for neuromorphic computing

Fatigue of NbOx-Based Locally Active Memristors—Part I: Experimental Characteristics

Understanding of the Volatile and Nonvolatile Switching in Ag-Based Memristors

Fatigue of NbO x -Based Locally Active Memristors—Part I: Experimental Characteristics

Biorealistic Neuronal Temperature-Sensitive Dynamics within Threshold Switching Memristors: Toward Neuromorphic Thermosensation

Thermal design engineering for improving the variation of memristor threshold

Synaptic Learning and Memory Functions Achieved in Self-rectifying BFO Memristor under Extreme Environmental Temperature

Temperature Control of Diffusive Memristor Hysteresis and Artificial Neuron Spiking

Effect of Interdiffusion and Crystallization on Threshold Switching Characteristics of Nb/Nb2O5/Pt Memristors

Realization of volatile and non-volatile resistive switching with N-TiO2 nanorod arrays based memristive devices through compositional control

Volatile and Nonvolatile Memristive Devices for Neuromorphic Computing